참고문헌 (19)

1. Yang, Heejun, Heo, Jinseong, Park, Seongjun, Song, Hyun Jae, Seo, David H., Byun, Kyung-Eun, Kim, Philip, Yoo, InKyeong, Chung, Hyun-Jong, Kim, Kinam. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science, vol.336, no.6085, 1140-1143.

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2. 2014 Silicon Nanoelectronics Workshop (SNW) Noh J. 1 2014 

3. Kim, Wonjae, Li, Changfeng, Chaves, Ferney A., Jiménez, David, Rodriguez, Raul D., Susoma, Jannatul, Fenner, Matthias A., Lipsanen, Harri, Riikonen, Juha. Tunable Graphene–GaSe Dual Heterojunction Device. Advanced materials, vol.28, no.9, 1845-1852.

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4. Lemaitre, Maxime G., Donoghue, Evan P., McCarthy, Mitchell A., Liu, Bo, Tongay, Sefaattin, Gila, Brent, Kumar, Purushottam, Singh, Rajiv K., Appleton, Bill R., Rinzler, Andrew G.. Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors. ACS nano, vol.6, no.10, 9095-9102.

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5. Hwang, Hyeon Jun, Chang, Kyoung Eun, Yoo, Won Beom, Shim, Chang Hoo, Lee, Sang Kyung, Yang, Jin Ho, Kim, So-Young, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun. A graphene barristor using nitrogen profile controlled ZnO Schottky contacts. Nanoscale, vol.9, no.7, 2442-2448.

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6. Chuang, Hsun-Jen, Tan, Xuebin, Ghimire, Nirmal Jeevi, Perera, Meeghage Madusanka, Chamlagain, Bhim, Cheng, Mark Ming-Cheng, Yan, Jiaqiang, Mandrus, David, Tománek, David, Zhou, Zhixian. High Mobility WSe₂ p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.14, no.6, 3594-3601.

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7. Kim, Kyounghwan, Larentis, Stefano, Fallahazad, Babak, Lee, Kayoung, Xue, Jiamin, Dillen, David C., Corbet, Chris M., Tutuc, Emanuel. Band Alignment in WSe₂–Graphene Heterostructures. ACS nano, vol.9, no.4, 4527-4532.

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8. Shim, Jaewoo, Kim, Hyo Seok, Shim, Yoon Su, Kang, Dong‐Ho, Park, Hyung‐Youl, Lee, Jaehyeong, Jeon, Jaeho, Jung, Seong Jun, Song, Young Jae, Jung, Woo‐Shik, Lee, Jaeho, Park, Seongjun, Kim, Jeehwan, Lee, Sungjoo, Kim, Yong‐Hoon, Park, Jin‐Hong. Extremely Large Gate Modulation in Vertical Graphene/WSe₂ Heterojunction Barristor Based on a Novel Transport Mechanism. Advanced materials, vol.28, no.26, 5293-5299.

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9. Yu, Lili, Lee, Yi-Hsien, Ling, Xi, Santos, Elton J. G., Shin, Yong Cheol, Lin, Yuxuan, Dubey, Madan, Kaxiras, Efthimios, Kong, Jing, Wang, Han, Palacios, Tomás. Graphene/MoS₂ Hybrid Technology for Large-Scale Two-Dimensional Electronics. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.14, no.6, 3055-3063.

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10. Chaves, Ferney A., Jimenez, David. The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions. IEEE transactions on electron devices, vol.63, no.11, 4521-4526.

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11. Lin, J.H., Zeng, J.J., Lin, Y.J.. Electronic transport for graphene/n-type Si Schottky diodes with and without H₂O₂ treatment. Thin solid films, vol.550, 582-586.

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12. Lee, Sang Kyung, Kim, Yun Ji, Heo, Sunwoo, Park, Woojin, Yoo, Tae Jin, Cho, Chunhum, Hwang, Hyeon Jun, Lee, Byoung Hun. Advantages of a buried-gate structure for graphene field-effect transistor. Semiconductor science and technology, vol.34, no.5, 055010-.

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13. Cho, Chunhum, Lee, Sang Kyung, Noh, Jin Woo, Park, Woojin, Lee, Sangchul, Lee, Young Gon, Hwang, Hyeon Jun, Kang, Chang Goo, Ham, Moon-Ho, Lee, Byoung Hun. Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern. Applied physics letters, vol.106, no.21, 213107-.

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14. Khatami, Yasin, Li, Hong, Xu, Chuan, Banerjee, Kaustav. Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling. IEEE transactions on electron devices, vol.59, no.9, 2444-2452.

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15. Cho, Kyeongjae, Gong, Cheng, Lee, Geunsik, Wang, Weichao, Shan, Bin, Vogel, Eric M., Wallace, Robert M.. First-Principles and Quantum Transport Studies of Metal-Graphene End Contacts. Materials Research Society symposia proceedings, vol.1259, 1259-S14-35-.

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16. Matsuda, Yuki, Deng, Wei-Qiao, Goddard, William A.. Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics. The journal of physical chemistry. C, Nanomaterials and Interfaces, vol.114, no.41, 17845-17850.

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17. Kim, So‐Young, Hwang, Jeongwoon, Kim, Yun Ji, Hwang, Hyeon Jun, Son, Myungwoo, Revannath, Nikam, Ham, Moon‐Ho, Cho, Kyeongjae, Lee, Byoung Hun. Threshold Voltage Modulation of a Graphene-ZnO Barristor Using a Polymer Doping Process. Advanced electronic materials, vol.5, no.7, 1800805-.

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18. Kim, Yong-Hoon, Sung Kim, Hu. Anomalous length scaling of carbon nanotube-metal contact resistance: An ab initio study. Applied physics letters, vol.100, no.21, 213113-.

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19. Kim, Han Seul, Kim, Hu Sung, Lee, Ga In, Kang, Jeung Ku, Kim, Yong-Hoon. Intrinsically low-resistance carbon nanotube-metal contacts mediated by topological defects. MRS Communications, vol.2, no.3, 91-96.

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