다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Journal of applied physics, v.120 no.1, 2016년, pp.014101 -
Shekhter, P. (Technion-Israel Institute of Technology 1 Department of Materials Science and Engineering, , Haifa 32000, Israel) , Schwendt, D. (Leibniz University of Hannover 2 Institute of Electronic Materials and Devices, , Schneiderberg 32, 30167 Hannover, Germany) , Amouyal, Y. (Technion-Israel Institute of Technology 1 Department of Materials Science and Engineering, , Haifa 32000, Israel) , Wietler, T. F. (Leibniz University of Hannover 2 Institute of Electronic Materials and Devices, , Schneiderberg 32, 30167 Hannover, Germany) , Osten, H. J. (Leibniz University of Hannover 2 Institute of Electronic Materials and Devices, , Schneiderberg 32, 30167 Hannover, Germany) , Eizenberg, M. (Technion-Israel Institute of Technology 1 Department of Materials Science and Engineering, , Haifa 32000, Israel)
AI-Helper
One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are...
Chem. Rev. 98 1479 1998 10.1021/cr940055h
Rare Earth Oxide Thin Films 2007
Microelectron. Eng. 86 1646 2009 10.1016/j.mee.2009.03.065
J. Solid State Chem. 171 170 2003 10.1016/S0022-4596(02)00204-9
Appl. Phys. Lett. 105 262901 2014 10.1063/1.4905356
Phys. Status Solidi A 205 695 2008 10.1002/pssa.200723509
J. Cryst. Growth 278 638 2005 10.1016/j.jcrysgro.2004.12.084
Solid-State Electron. 53 833 2009 10.1016/j.sse.2009.04.027
Appl. Phys. Lett. 103 153501 2013 10.1063/1.4824422
Science 283 1897 1999 10.1126/science.283.5409.1897
Appl. Phys. Lett. 77 3230 2000 10.1063/1.1326041
2014
Nature 479 324 2011 10.1038/nature10678
Annu. Rev. Phys. Chem. 57 467 2006 10.1146/annurev.physchem.56.092503.141307
J. Appl. Phys. 110 084907 2011 10.1063/1.3622514
Appl. Phys. Lett. 91 082904 2007 10.1063/1.2773759
J. Appl. Phys. 102 034513 2007 10.1063/1.2767226
Appl. Phys. Lett. 90 193511 2007 10.1063/1.2738367
Phys. Rev Lett. 63 632 1989 10.1103/PhysRevLett.63.632
Phys. Rev. B 50 10811 1994 10.1103/PhysRevB.50.10811
Mater. Sci. Semicond. Proc. 8 73 2005 10.1016/j.mssp.2004.09.077
J. Vac. Sci. Technol. B 31 031205 2013 10.1116/1.4802917
IEEE Trans. Electron Devices 50 2112 2003 10.1109/TED.2003.817271
Density-Functional Theory of Atoms and Molecules 1989
Electronic Structure-Basic Theory and Practical Methods 2004
Acta Mater. 58 1117 2010 10.1016/j.actamat.2009.10.049
J. Alloy Compd. 423 102 2006 10.1016/j.jallcom.2005.12.037
C. R. Hebd. Seances Acad. Sci. 261 149 1965
Russ. J. Inorg. Chem. 39 211 1994
Comp. Mater. Sci. 6 15 1996 10.1016/0927-0256(96)00008-0
Phys. Rev. B: Condens. Matter 54 11169 1996 10.1103/PhysRevB.54.11169
Phys. Rev. B: Condens. Matter 49 14251 1994 10.1103/PhysRevB.49.14251
2010
Phys. Rev. B 59 3 1758 1999 10.1103/PhysRevB.59.1758
Appl. Phys. Lett. 89 143514 2006 10.1063/1.2360209
J. Phys. Chem. 77 964 1973 10.1021/j100626a023
Appl. Phys. Lett. 100 173508 2012 10.1063/1.4704925
Mater. Sci. Eng. R 43 139 2004 10.1016/j.mser.2003.12.002
Appl. Phys. Lett. 100 232905 2012 10.1063/1.4727893
Appl. Surf. Sci. 190 66 2002 10.1016/S0169-4332(01)00841-8
Appl. Phys. Lett. 90 252101 2007 10.1063/1.2746419
CRC Handbook of Chemistry and Physics 85th ed. 2005
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.