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NTIS 바로가기European physical journal, EPJ AP. Applied physics, v.88 no.3, 2019년, pp.30103 -
Seok, Ogyun , Kim, Hyoung Woo , Kang, In Ho , Ha, Min-Woo , Bahng, Wook
Effects of junction profiles in bottom protection p-well (BPW) on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs were investigated using simulation methods. Breakdown mechanisms of BPW in the device were also elucidated by energy-band diagram and electric-field distribution across tren...
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