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Engineering research express, v.2 no.3, 2020년, pp.035017 -
Kumar, Ajay
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AbstractThis work reports the effect of x-ray radiation on In2O5Sn based Transparent Gate Recessed Channel (TGRC) MOSFET with the high-k dielectric at the sub-20 nm regime. Reliability of TGRC-MOSFET with a high-k dielectric in harsh radiation environment (x-ray radiation in the 1k to 10k rad dose r...
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