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IEEE transactions on electron devices, v.67 no.8, 2020년, pp.3278 - 3284
Weiße, J. (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany) , Matthus, C. (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany) , Schlichting, H. (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany) , Mitlehner, H. (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany) , Erlbacher, T.
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The electrical behavior of lateral 4H-SiC n-laterally-diffused metal-oxide semiconductor (LDMOS) transistors with reduced surface field (RESURF) for integrated circuits was designed, measured, and modeled using different design variations. An additional implanted n-layer forming the drift region of ...
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