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NTIS 바로가기Materials science in semiconductor processing, v.123, 2021년, pp.105534 -
Kim, Soo Hyeon (Division of Material Analysis and Research, Korea Basic Science Institute) , Yang, Mino (Seoul Center, Korea Basic Science Institute Seoul) , Lee, Hae-Yong (LumiGNtech Co. Ltd., Room 206, Business Incubator Bldg.) , Choi, Jong-Soon (Division of Material Analysis and Research, Korea Basic Science Institute) , Lee, Hyun Uk (Division of Material Analysis and Research, Korea Basic Science Institute) , Kim, Un Jeong (Imaging Device Laboratory, Samsung Advanced Institute of Technology) , Lee, Moonsang (Division of Material Analysis and Research, Korea Basic Science Institute)
Abstract While the importance of α-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) α-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE...
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