참고문헌 (39)

1. ACS Appl. Mater. Interfaces Shahab 2018 Using mosaicity to tune thermal transport in polycrystalline aluminum nitride thin films 

2. Sci. Rep. Tran 5 14734 2015 10.1038/srep14734 Direct growth and controlled coalescence of thick AlN template on micro-circle patterned Si substrate 

   상세보기

3. J. Cryst. Growth Baker 403 29 2014 10.1016/j.jcrysgro.2014.06.018 Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor 

   상세보기

4. Appl. Phys. Lett. Banal 92 241905 2008 10.1063/1.2937445 Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy 

   상세보기

5. Scripta Mater. Liu 154 45 2018 10.1016/j.scriptamat.2018.05.017 Defects induced broad spectral photoresponse of PVT-grown bulk AlN crystals 

   상세보기

6. Coatings Boichot 7 136 2017 10.3390/coatings7090136 Epitaxial growth of AlN on (0001) sapphire: assessment of HVPE process by a design of experiments approach 

   상세보기

7. Thin Solid Films Claudel 573 140 2014 10.1016/j.tsf.2014.11.022 Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy 

   상세보기

8. 10.1115/IMECE2011-65925 D. Endres, S. Mazumder, Numerical investigation of pulsed chemical vapor deposition of aluminum nitride to reduce particle formation, in: ASME 2011 International Mechanical Engineering Congress and Exposition, American Society of Mechanical Engineers, 2011, pp. 1275-1283. 

   

9. Appl. Phys. Express Takeuchi 1 021102 2008 10.1143/APEX.1.021102 Improvement of Al-polar AlN layer quality by three-stage flow-modulation metalorganic chemical vapor deposition 

   상세보기

10. J. Cryst. Growth Zeimer 377 32 2013 10.1016/j.jcrysgro.2013.04.041 High quality AlGaN grown on ELO AlN/sapphire templates 

    상세보기

11. J. Am. Chem. Soc. Qi 140 11935 2018 10.1021/jacs.8b03871 Fast growth of strain-free AlN on graphene-buffered sapphire 

    상세보기

12. J. Alloys Compd. Wang 644 444 2015 10.1016/j.jallcom.2015.05.032 Effect of Al substrate nitridation on the properties of AlN films grown by pulsed laser deposition and its mechanism 

    상세보기

13. Comput. Mater. Sci. Kresse 6 15 1996 10.1016/0927-0256(96)00008-0 Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set 

    상세보기

14. Phys. Rev. Lett. Perdew 77 3865 1996 10.1103/PhysRevLett.77.3865 Generalized gradient approximation made simple 

    상세보기

15. ACS Appl. Mater. Interfaces Fang 10 30811 2018 10.1021/acsami.8b08242 Wurtzite AlN(0001) surface oxidation: hints from ab initio calculations 

    상세보기

16. IEEE Electron Device Lett. Zou 37 636 2016 10.1109/LED.2016.2548488 Fully vertical GaN pin diodes using GaN-on-Si epilayers 

    상세보기

17. Mol. Phys. Shao 113 184 2015 10.1080/00268976.2014.952696 Advances in molecular quantum chemistry contained in the Q-Chem 4 program package 

    상세보기

18. Physical Review B Monkhorst 13 5188 1976 10.1103/PhysRevB.13.5188 Special points for Brillouin-zone integrations 

    상세보기

19. J. Alloys Compd. Balaji 526 103 2012 10.1016/j.jallcom.2012.02.111 Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy 

    상세보기

20. J. Eur. Ceram. Soc. Dorignac 13 345 1994 10.1016/0955-2219(94)90010-8 Transmission electron microscopy studies of AlN deposits 

    상세보기

21. ACS Appl. Mater. Interfaces Singh 10 20085 2018 10.1021/acsami.8b02899 Using mosaicity to tune thermal transport in polycrystalline aluminum nitride thin films 

    상세보기

22. J Nanomater Shih 2014 2 2014 10.1155/2014/643672 Design and fabrication of nanoscale IDTs using electron beam technology for high-frequency saw devices 

    상세보기

23. J. Mater. Res. Harris 5 1763 1990 10.1557/JMR.1990.1763 On the nature of the oxygen-related defect in aluminum nitride 

    상세보기

24. J. Appl. Phys. Dovidenko 82 4296 1997 10.1063/1.366236 Characteristics of stacking faults in AlN thin films 

    상세보기

25. Appl. Phys. Lett. Chang 114 091107 2019 10.1063/1.5081112 Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate 

    상세보기

26. Phys. Rev. B Chan 77 235430 2008 10.1103/PhysRevB.77.235430 First-principles study of metal adatom adsorption on graphene 

    상세보기

27. Appl. Phys. Lett. Cho 93 111904 2008 10.1063/1.2985816 Reduction of stacking fault density in m-plane GaN grown on SiC 

    상세보기

28. Appl. Phys. Lett. Jain 93 051113 2008 10.1063/1.2969402 Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes 

    상세보기

29. Phys. Rev. B Kazaryan 63 184102 2001 10.1103/PhysRevB.63.184102 Grain growth in systems with anisotropic boundary mobility: analytical model and computer simulation 

    상세보기

30. J. Appl. Phys. Uedono 105 2009 10.1063/1.3079333 Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation 

    상세보기

31. Superlattices Microstruct. Rong 93 27 2016 10.1016/j.spmi.2016.02.050 Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy 

    상세보기

32. Phys. Rev. B Prokofyeva 63 125313 2001 10.1103/PhysRevB.63.125313 Vibrational properties of AlN grown on (111)-oriented silicon 

    상세보기

33. Appl. Phys. Lett. Wagner 77 346 2000 10.1063/1.127009 Phonon deformation potentials of α-GaN and-AlN: An ab initio calculation 

    상세보기

34. Le Journal de Physique IV Gálvez 7 1997 Tensile strength measurements of ceramic materials at high rates of strain 

35. J. Am. Ceram. Soc. Chen 79 579 1996 10.1111/j.1151-2916.1996.tb07913.x Static and dynamic compressive behavior of aluminum nitride under moderate confinement 

    상세보기

36. J. Mech. Phys. Solids Hu 59 1076 2011 10.1016/j.jmps.2011.02.003 The compressive failure of aluminum nitride considered as a model advanced ceramic 

    상세보기

37. Phil. Mag. Zong 84 3353 2004 10.1080/14786430412331283604 Tensile strength of aluminium nitride films 

    상세보기

38. B. Wu, J. Bai, V. Tassev, M.L. Nakarmi, W. Sun, X. Huang, M. Dudley, H. Zhang, D. Bliss, J. Lin, Stress evolution during the early stages of AlN vapor growth, in: materials research society symposium proceedings, Warrendale, Pa.; Materials Research Society; 1999, 2006, pp. 653. 

39. J. Appl. Phys. Bhandari 101 033528 2007 10.1063/1.2432376 Competition between tensile and compressive stress creation during constrained thin film island coalescence 

    상세보기