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NTIS 바로가기Society for Information Display International Symposium digest of technical papers, v.51 no.1, 2020년, pp.192 - 195
Chung, Ui-Jin (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Choi, Seung-Chan (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Noh, So young (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Kim, Ki-Tae (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Moon, Kyeong-Ju (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Kim, Jeong-Hyun (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Park, Kwon-Shik (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Choi, Hyun-Chul (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea) , Kang, In-Byeong (LG Display Co., Ltd. Paju-si, Gyeongki-do Korea)
Low‐Temperature Poly‐Si and Oxide (LTPO) thin‐film transistors (TFTs) have been successfully manufactured and the AMOLED panels with LTPO TFTs are adapted to Apple Watch. The manufacturing technology of LTPO TFT such as stack‐up structure, device characteristics, panel im...
nat. commun. Chen H. 1038 10 2014 Large‐scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin‐film transistors
Inoue, H., Matsuzaki, T., Nagatsuka, S., Okazaki, Y., Sasaki, T., Noda, K., Matsubayashi, D., Ishizu, T., Onuki, T., Isobe, A., Shionoiri, Y., Kato, K., Okuda, T., Koyama, J., Yamazaki, S.. Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor. IEEE journal of solid-state circuits, vol.47, no.9, 2258-2265.
Chang, Ting-Kuo, Lin, Chin-Wei, Chang, Shihchang. 39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs†. Society for Information Display International Symposium digest of technical papers, vol.50, no.1, 545-548.
Gwanghyeon Baek, Abe, K., Kuo, A., Kumomi, H., Kanicki, J.. Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs. IEEE transactions on electron devices, vol.58, no.12, 4344-4353.
Wu, I.-W., Huang, T.-Y., Jackson, W.B., Lewis, A.G., Chiang, A.. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.12, no.4, 181-183.
Park, Cheol-Min, Jeon, Jae-Hong, Han, Min-Koo. A novel polycrystalline silicon thin film transistor structure for improving hydrogenation effects. Solid-state electronics, vol.42, no.1, 185-187.
Kamiya, Toshio, Hosono, Hideo. (Invited) Roles of Hydrogen in Amorphous Oxide Semiconductor. ECS transactions, vol.54, no.1, 103-113.
Yamauchi, Yoshimitsu, Kamakura, Yoshinari, Isagi, Yousuke, Matsuoka, Toshimasa, Malotaux, Satoshi. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications. Japanese journal of applied physics, vol.52, no.r9, 094101-.
Kim, Hyo Jin, Park, Se Yeob, Jung, Hong Yoon, Son, Byeong Geun, Lee, Chang-Kyu, Lee, Chul-Kyu, Jeong, Jong Han, Mo, Yeon-Gon, Son, Kyoung Seok, Ryu, Myung Kwan, Lee, Sangyoon, Jeong, Jae Kyeong. Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors. Journal of physics. D, applied physics, vol.46, no.5, 055104-.
Yu, Eric Kai-Hsiang, Jun, Sungwoo, Kim, Dae Hwan, Kanicki, Jerzy. Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization. Journal of applied physics, vol.116, no.15, 154505-.
Kang, Youngho, Ahn, Byung Du, Song, Ji Hun, Mo, Yeon Gon, Nahm, Ho‐Hyun, Han, Seungwu, Jeong, Jae Kyeong. Hydrogen Bistability as the Origin of Photo‐Bias‐Thermal Instabilities in Amorphous Oxide Semiconductors. Advanced electronic materials, vol.1, no.7, 1400006-.
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