[논문]Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED

Park, Juhyuk; Baek, Woojin; Geum, Dae-Myeong; Kim, Sanghyeon

doi:10.1186/s11671-022-03669-5

[해외논문] Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED 원문보기

Nanoscale research letters, v.17 no.1, 2022년, pp.29 -

Park, Juhyuk (School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea) , Baek, Woojin (School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea) , Geum, Dae-Myeong (Infromation and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea) , Kim, Sanghyeon (School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea)

Abstract ▼ AI-Helper

The passivation effects of sulfur treatment and Al2O3 passivation for AlGaInP/GaInP red micro-light-emitting-diodes (LEDs) were investigated in terms of the external quantum efficiency (EQE) and the current density showing the peak EQE (JEQE, peak). We systematically compared the electrical and optical characteristics of the micro-LEDs with and without passivation according to various sizes. Interestingly, our investigation indicated that simple electrical characteristics such as current density–voltage property are difficult to precisely reflect the minor change in electrical properties due to passivation when the device has the inherently low leakage current. Whereas the EQE was enhanced by 20% and JEQE, peak was largely shifted to a lower current density region at the LED with a size of 15 × 15 μm2. To examine the passivation effects, we carefully analyzed the EQE and JEQE, peak with the ABC recombination model, and established the methodology to investigate the influence of a sidewall in micro-LEDs. As a result, we extracted the surface recombination velocity regarding the surface passivation, showing a nearly 14% reduction with the passivation.Supplementary InformationThe online version contains supplementary material available at 10.1186/s11671-022-03669-5.

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[해외논문] Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED 원문보기

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[해외논문] Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED 원문보기

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