참고문헌 (22)

1. Procedia Eng. NB Tanvir 168 284 2016 10.1016/j.proeng.2016.11.195 N.B. Tanvir, E. Laubender, O. Yurchenko, G. Urban, Room temperature CO sensing with metal oxide nanoparticles using work function readout. Procedia Eng. 168, 284-288 (2016) 

   상세보기

2. Nanoscale Res. Lett. NM Ghazali 9 1 1 2014 10.1186/1556-276X-9-1 N.M. Ghazali, M.R. Mahmood, K. Yasui, A.M. Hashim, Electrochemically deposited gallium oxide nanostructures on silicon substrates. Nanoscale Res. Lett. 9(1), 1-7 (2014) 

   상세보기

3. L.T. Ju, S.L. Ju, 2012. Deposition of Ga2O3 thin film for high-temperature oxygen sensing applications. J Ovonic Res, 8, pp.73 - 9 

4. IEEE Trans. Electron. Devices W Saito 53 2 356 2006 10.1109/TED.2005.862708 W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications. IEEE Trans. Electron. Devices 53(2), 356-362 (2006) 

   상세보기

5. Appl. Phys. A R Ranjan 126 3 1 2020 10.1007/s00339-020-3342-x R. Ranjan, N. Kashyap, A. Raman, High-performance dual-gate-charge-plasma-AlGaN/GaN MIS-HEMT. Appl. Phys. A 126(3), 1-9 (2020) 

   상세보기

6. IEEE Electron Device Lett. TE Hsieh 35 7 732 2014 10.1109/LED.2014.2321003 T.E. Hsieh, E.Y. Chang, Y.Z. Song, Y.C. Lin, H.C. Wang, S.C. Liu, S. Salahuddin, C.C. Hu, Gate recessed quasi-normally OFF Al 2 O 3/AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer. IEEE Electron Device Lett. 35(7), 732-734 (2014) 

   상세보기

7. L.M. Tolbert, Power electronics for distributed energy systems and transmission and distribution applications: Assessing the technical needs for utility applications (No. ORNL/TM-2005/230) (Oak Ridge National Lab.(ORNL), 2005), Oak Ridge, TN (United States) 

8. IEEE Trans. Electron. Devices M Bhatnagar 40 3 645 1993 10.1109/16.199372 M. Bhatnagar, B.J. Baliga, Comparison of 6H-SiC, 3 C-SiC, and Si for power devices. IEEE Trans. Electron. Devices 40(3), 645-655 (1993) 

   상세보기

9. Microelectron. Eng. TP Chow 83 1 112 2006 10.1016/j.mee.2005.10.057 T.P. Chow, High-voltage SiC and GaN power devices. Microelectron. Eng. 83(1), 112-122 (2006) 

   상세보기

10. 10.6117/kmeps.2014.21.2.071 A. Sharma, S.J. Lee, Y.J. Jang, J.P. Jung, 2014. SiC based Technology for High Power Electronics and Packaging Applications. J. Microelectron. Packag. Soc, 21(2), p.71 

    원문보기 상세보기

11. 10.1016/j.jestch.2020.12.020 A Surface Potential Model for Tri-Gate Metal Oxide Semiconductor Field Effect Transistor: Analysis below 10 nm Channel Length,“ Engineering Science and Technology, an International Journal (Elsevier), vol. 24, 2021, pp. 879-889 

    상세보기

12. Superlattices and Microstructures (Elsevier) Voltage and Oxide Thickness Dependent Tunneling Current Density and Tunnel Resistivity Model 111 628 2017 10.1016/j.spmi.2017.07.022 Voltage and Oxide Thickness Dependent Tunneling Current Density and Tunnel Resistivity Model, Application to High-k Material HfO2 Based MOS Devices”. Superlattices and Microstructures (Elsevier) 111, 628-641 (2017) 

    상세보기

13. J. Nanoelectronics Optoelectron. (American Sci. Publishers) A New Surface Potential and Drain Current Model of Dual Material Gate Short Channel Metal Oxide Semiconductor Field Effect Transistor in Sub-Threshold Regime 14 868 2019 10.1166/jno.2019.2547 A New Surface Potential and Drain Current Model of Dual Material Gate Short Channel Metal Oxide Semiconductor Field Effect Transistor in Sub-Threshold Regime, Application to High-k Material HfO2”. J. Nanoelectronics Optoelectron. (American Sci. Publishers) 14, 868-876 (2019) 

    상세보기

14. Solid State Electron. JB Casady 39 10 1409 1996 10.1016/0038-1101(96)00045-7 J.B. Casady, R.W. Johnson, Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review. Solid State Electron. 39(10), 1409-1422 (1996) 

    상세보기

15. 10.1109/PESC.2003.1218300 N. Zhang, V. Mehrotra, S. Chandrasekaran, B. Moran, L. Shen, U. Mishra, E. Etzkorn, D. Clarke, 2003, June. Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristics. In IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC’03. (Vol. 1, pp. 233-237). IEEE 

    

16. 10.1002/pssa.201700650 I.H. Hwang, S.K. Eom, G.H. Choi, M.J. Kang, J.G. Lee, H.Y. Cha, K.S. Seo, 2018. High-Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON. physica status solidi (a), 215(10), p.1700650 

    상세보기

17. 10.1063/1.3596440 S.C. Hung, C.W. Chen, C.Y. Shieh, G.C. Chi, R. Fan, S.J. Pearton, “High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature”. Applied Physics Letters, 98(22), p.223504, 2011 

    상세보기

18. Sens. Actuators B J Schalwig 87 3 425 2002 10.1016/S0925-4005(02)00292-7 J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann, Gas sensitive GaN/AlGaN-heterostructures. Sens. Actuators B 87(3), 425-430 (2002) 

    상세보기

19. Appl. Catal. P Meriaudeau 73 1 L13 1991 10.1016/0166-9834(91)85106-6 P. Meriaudeau, C. Naccache, H-ZSM-5 supported Ga2O3 dehydrocyclisation catalysts Infrared spectroscopic evidence of gallium oxide surface mobility. Appl. Catal. 73(1), L13-L18 (1991) 

    상세보기

20. T. Nicolet, “Introduction to Fourier Transform Infrared Spectrometry”, short report 

21. 10.1109/5.469300 S.N. Mohammad, A.A. Salvador, H. Morkoc, 1995. Emerging gallium nitride based devices. Proceedings of the IEEE, 83(10), pp.1306-1355 

    상세보기

22. 10.1109/PESC.2005.1581596 M.A. Khan, G. Simin, S.G. Pytel, A. Monti, E. Santi, J.L. Hudgins, 2005, June. New developments in gallium nitride and the impact on power electronics. In 2005 IEEE 36th Power Electronics Specialists Conference (pp. 15-26). IEEE 

    

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