최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Nanophotonics, v.11 no.21 = no.21, 2022년, pp.4793 - 4804
Katsuro, Sae (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya, 468-8502, Japan) , Lu, Weifang (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya, 468-8502, Japan) , Ito, Kazuma (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya, 468-8502, Japan) , Nakayama, Nanami (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya, 468-8502, Japan) , Yamamura, Shiori (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya, 468-8502, Japan) , Jinno, Yukimi (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya, 468-8502, Japan) , Inaba, Soma (Department of Ma) , Shima, Ayaka , Sone, Naoki , Han, Dong-Pyo , Huang, Kai , Iwaya, Motoaki , Takeuchi, Tetsuya , Kamiyama, Satoshi
AbstractGaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength micro-light emitting diodes (LEDs). To improve the emission properties in GaInN/GaN MQS NWs, it is necessary to suppress the emission fr...
[1] F. Templier, “GaN-based emissive microdisplays: a very promising technology for compact, ultra-high brightness display systems,” J. Soc. Inf. Disp. , vol. 24, pp. 669-675, 2016. https://doi.org/10.1002/jsid.516 . Templier F. GaN-based emissive microdisplays: a very promising technology for compact, ultra-high brightness display systems J. Soc. Inf. Disp. 24 669 675 2016 https://doi.org/10.1002/jsid.516
[2] Y. Huang, E. L. Hsiang, M. Y. Deng, and S. T. Wu, “Mini-LED, Micro-LED and OLED displays: present status and future perspectives,” Light Sci. Appl. , vol. 9, p. 105, 2020. https://doi.org/10.1038/s41377-020-0341-9 . Huang Y. Hsiang E. L. Deng M. Y. Wu S. T. Mini-LED, Micro-LED and OLED displays: present status and future perspectives Light Sci. Appl. 9 105 2020 https://doi.org/10.1038/s41377-020-0341-9
[3] J. J. Wierer and N. Tansu, “III-Nitride micro-LEDs for efficient emissive displays,” Laser Photonics Rev. , vol. 13, p. 1900141, 2019. https://doi.org/10.1002/lpor.201900141 . Wierer J. J. Tansu N. III-Nitride micro-LEDs for efficient emissive displays Laser Photonics Rev. 13 1900141 2019 https://doi.org/10.1002/lpor.201900141
[4] J. Y. Lin and H. X. Jiang, “Development of microLED,” Appl. Phys. Lett. , vol. 116, p. 100502, 2020. https://doi.org/10.1063/1.5145201 . Lin J. Y. Jiang H. X. Development of microLED Appl. Phys. Lett. 116 100502 2020 https://doi.org/10.1063/1.5145201
[5] S. S. Konoplev, K. A. Bulashevich, and S. Y. Karpov, “From large-size to micro-LEDs: scaling trends revealed by modeling,” Phys. Status Solidi (a) , vol. 215, p. 1700508, 2018. https://doi.org/10.1002/pssa.201700508 . Konoplev S. S. Bulashevich K. A. Karpov S. Y. From large-size to micro-LEDs: scaling trends revealed by modeling Phys. Status Solidi (a) 215 1700508 2018 https://doi.org/10.1002/pssa.201700508
[6] K. A. Bulashevich and S. Y. Karpov, “Impact of surface recombination on efficiency of III-nitride light-emitting diodes,” Phys. Status Solidi RRL , vol. 10, pp. 480-484, 2016. https://doi.org/10.1002/pssr.201600059 . Bulashevich K. A. Karpov S. Y. Impact of surface recombination on efficiency of III-nitride light-emitting diodes Phys. Status Solidi RRL 10 480 484 2016 https://doi.org/10.1002/pssr.201600059
[7] F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. , vol. 191, pp. 112-116, 2017. https://doi.org/10.1016/j.jlumin.2016.09.052 . Olivier F. Tirano S. Dupré L. Aventurier B. Largeron C. Templier F. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application J. Lumin. 191 112 116 2017 https://doi.org/10.1016/j.jlumin.2016.09.052
[8] F. P. Massabuau, M. J. Davies, F. Oehler, et al.., “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. , vol. 105, p. 112110, 2014. https://doi.org/10.1063/1.4896279 . Massabuau F. P. Davies M. J. Oehler F. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem Appl. Phys. Lett. 105 112110 2014 https://doi.org/10.1063/1.4896279
[9] Y. Zhao, H. Fu, G. T. Wang, and S. Nakamura, “Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes,” Adv. Opt. Photonics , vol. 10, pp. 246-308, 2018. https://doi.org/10.1364/aop.10.000246 . Zhao Y. Fu H. Wang G. T. Nakamura S. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Adv. Opt. Photonics 10 246 308 2018 https://doi.org/10.1364/aop.10.000246
[10] D. P. Han, K. Yamamoto, S. Ishimoto, et al.., “Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis,” Appl. Phys. Express , vol. 12, p. 032006, 2019. https://doi.org/10.7567/1882-0786/aafca2 . Han D. P. Yamamoto K. Ishimoto S. Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis Appl. Phys. Express 12 032006 2019 https://doi.org/10.7567/1882-0786/aafca2
[11] T. Takeuchi, S. Sota, M. Katsuragawa, et al.., “Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. , vol. 36, p. L382, 1997. https://doi.org/10.1143/jjap.36.l382 . Takeuchi T. Sota S. Katsuragawa M. Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Jpn. J. Appl. Phys. 36 L382 1997 https://doi.org/10.1143/jjap.36.l382
[12] T. Takeuchi, C. Wetzel, S. Yamaguchi, et al.., “Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect,” Appl. Phys. Lett. , vol. 73, pp. 1691-1693, 1998. https://doi.org/10.1063/1.122247 . Takeuchi T. Wetzel C. Yamaguchi S. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect Appl. Phys. Lett. 73 1691 1693 1998 https://doi.org/10.1063/1.122247
[13] T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. , vol. 39, p. 413, 2000. https://doi.org/10.1143/jjap.39.413 . Takeuchi T. Amano H. Akasaki I. Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells Jpn. J. Appl. Phys. 39 413 2000 https://doi.org/10.1143/jjap.39.413
[14] S. Kamiyama, W. Lu, T. Takeuchi, M. Iwaya, and I. Akasaki, “Growth and characterization of core-shell structures consisting of GaN nanowire core and GaInN/GaN multi-quantum shell,” ECS J. Solid State Sci. Technol. , vol. 9, p. 015007, 2019. https://doi.org/10.1149/2.0252001jss . Kamiyama S. Lu W. Takeuchi T. Iwaya M. Akasaki I. Growth and characterization of core-shell structures consisting of GaN nanowire core and GaInN/GaN multi-quantum shell ECS J. Solid State Sci. Technol. 9 015007 2019 https://doi.org/10.1149/2.0252001jss
[15] K. Ito, W. Lu, S. Katsuro, et al., “Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs,” Nanoscale Adv. , vol. 4, pp. 102-110, 2021. https://doi.org/10.1039/d1na00299f . Ito K. Lu W. Katsuro S. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs Nanoscale Adv. 4 102 110 2021 https://doi.org/10.1039/d1na00299f
[16] W. Lu, K. Ito, N. Sone, et al.., “Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures,” Appl. Surf. Sci. , vol. 539, p. 148279, 2021. https://doi.org/10.1016/j.apsusc.2020.148279 . Lu W. Ito K. Sone N. Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures Appl. Surf. Sci. 539 148279 2021 https://doi.org/10.1016/j.apsusc.2020.148279
[17] W. Lu, Y. Miyamoto, R. Okuda, et al.., “Correlation between optical and structural characteristics in coaxial GaInN/GaN multiple quantum shell nanowires with AlGaN spacers,” ACS Appl. Mater. Interfaces , vol. 12, pp. 51082-51091, 2020. https://doi.org/10.1021/acsami.0c15366 . Lu W. Miyamoto Y. Okuda R. Correlation between optical and structural characteristics in coaxial GaInN/GaN multiple quantum shell nanowires with AlGaN spacers ACS Appl. Mater. Interfaces 12 51082 51091 2020 https://doi.org/10.1021/acsami.0c15366
[18] W. Lu, N. Sone, N. Goto, et al.., “Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires,” Nanoscale , vol. 11, pp. 18746-18757, 2019. https://doi.org/10.1039/c9nr07271c . Lu W. Sone N. Goto N. Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires Nanoscale 11 18746 18757 2019 https://doi.org/10.1039/c9nr07271c
[19] M. Nami, A. Rashidi, M. Monavarian, et al.., “Electrically injected GHz-class GaN/inGaN core-shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity,” ACS Photonics , vol. 6, pp. 1618-1625, 2019. https://doi.org/10.1021/acsphotonics.9b00639 . Nami M. Rashidi A. Monavarian M. Electrically injected GHz-class GaN/inGaN core-shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity ACS Photonics 6 1618 1625 2019 https://doi.org/10.1021/acsphotonics.9b00639
[20] R. Chaji, E. Fathi, and A. Zamani, 19-15: Invited Paper: Low-Cost Micro-LED Displays for All Applications, SID Symposium Digest of Technical Papers , Wiley Online Library, 2017, pp. 264-267. Chaji R. Fathi E. Zamani A. 19-15: Invited Paper: Low-Cost Micro-LED Displays for All Applications, SID Symposium Digest of Technical Papers Wiley Online Library 2017 264 267
[21] K. Ding, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Micro-LEDs, a manufacturability perspective,” Appl. Sci. , vol. 9, p. 1206, 2019. https://doi.org/10.3390/app9061206 . Ding K. Avrutin V. Izyumskaya N. Özgür Ü. Morkoç H. Micro-LEDs, a manufacturability perspective Appl. Sci. 9 1206 2019 https://doi.org/10.3390/app9061206
[22] H. Choi, C. Jeon, M. Dawson, P. Edwards, and R. Martin, “Fabrication and performance of parallel-addressed InGaN micro-LED arrays,” IEEE Photonics Technol. Lett. , vol. 15, pp. 510-512, 2003. https://doi.org/10.1109/lpt.2003.809257 . Choi H. Jeon C. Dawson M. Edwards P. Martin R. Fabrication and performance of parallel-addressed InGaN micro-LED arrays IEEE Photonics Technol. Lett. 15 510 512 2003 https://doi.org/10.1109/lpt.2003.809257
[23] F. Xu, Y. Tan, Z. Xie, and B. Zhang, “Implantation energy-and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation,” Opt. Express , vol. 29, pp. 7757-7766, 2021. https://doi.org/10.1364/oe.421272 . Xu F. Tan Y. Xie Z. Zhang B. Implantation energy-and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation Opt. Express 29 7757 7766 2021 https://doi.org/10.1364/oe.421272
[24] S. D. Hersee, X. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. , vol. 6, pp. 1808-1811, 2006. https://doi.org/10.1021/nl060553t . Hersee S. D. Sun X. Wang X. The controlled growth of GaN nanowires Nano Lett. 6 1808 1811 2006 https://doi.org/10.1021/nl060553t
[25] C. Mounir, T. Schimpke, G. Rossbach, A. Avramescu, M. Strassburg, and U. T. Schwarz, “Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods,” J. Appl. Phys. , vol. 121, p. 025701, 2017. https://doi.org/10.1063/1.4973899 . Mounir C. Schimpke T. Rossbach G. Avramescu A. Strassburg M. Schwarz U. T. Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods J. Appl. Phys. 121 025701 2017 https://doi.org/10.1063/1.4973899
[26] W. Lim, H. Kum, Y. J. Choi, et al.., “SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes,” J. Vac. Sci, Technol. B , vol. 34, p. 042204, 2016. https://doi.org/10.1116/1.4959027 . Lim W. Kum H. Choi Y. J. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes J. Vac. Sci, Technol. B 34 042204 2016 https://doi.org/10.1116/1.4959027
[27] H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. , vol. 96, p. 231104, 2010. https://doi.org/10.1063/1.3443734 . Sekiguchi H. Kishino K. Kikuchi A. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate Appl. Phys. Lett. 96 231104 2010 https://doi.org/10.1063/1.3443734
[28] K. Kishino, A. Yanagihara, K. Ikeda, and K. Yamano, “Monolithic integration of four-colour InGaN-based nanocolumn LEDs,” Electron. Lett. , vol. 51, pp. 852-854, 2015. https://doi.org/10.1049/el.2015.0770 . Kishino K. Yanagihara A. Ikeda K. Yamano K. Monolithic integration of four-colour InGaN-based nanocolumn LEDs Electron. Lett. 51 852 854 2015 https://doi.org/10.1049/el.2015.0770
[29] K. Ito, W. Lu, N. Sone, et al.., “Development of monolithically grown coaxial GaInN/GaN multiple quantum shell nanowires by MOCVD,” Nanomaterials , vol. 10, p. 1354, 2020. https://doi.org/10.3390/nano10071354 . Ito K. Lu W. Sone N. Development of monolithically grown coaxial GaInN/GaN multiple quantum shell nanowires by MOCVD Nanomaterials 10 1354 2020 https://doi.org/10.3390/nano10071354
[30] M. Sheen, Y. Ko, D. U. Kim, et al.., “Highly efficient blue InGaN nanoscale light-emitting diodes,” Nature , vol. 608, pp. 56-61, 2022. https://doi.org/10.1038/s41586-022-04933-5 . Sheen M. Ko Y. Kim D. U. Highly efficient blue InGaN nanoscale light-emitting diodes Nature 608 56 61 2022 https://doi.org/10.1038/s41586-022-04933-5
[31] N. Sone, A. Suzuki, H. Murakami, et al.., “Improved uniform current injection into core-shell-type GaInN nanowire light-emitting diodes by optimizing growth condition and indium-tin-oxide deposition,” Phys. Status Solidi (a) , vol. 217, p. 1900715, 2020. https://doi.org/10.1002/pssa.201900715 . Sone N. Suzuki A. Murakami H. Improved uniform current injection into core-shell-type GaInN nanowire light-emitting diodes by optimizing growth condition and indium-tin-oxide deposition Phys. Status Solidi (a) 217 1900715 2020 https://doi.org/10.1002/pssa.201900715
[32] S. Katsuro, W. Lu, K. Ito, et al.., “Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions,” Nanophotonics , vol. 10, pp. 3441-3450, 2021. https://doi.org/10.1515/nanoph-2021-0210 . Katsuro S. Lu W. Ito K. Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions Nanophotonics 10 3441 3450 2021 https://doi.org/10.1515/nanoph-2021-0210
[33] K. Ito, W. Lu, S. Katsuro, et al.., “Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs,” Nanoscale Adv. , vol. 4, pp. 102-110, 2022. https://doi.org/10.1039/d1na00299f . Ito K. Lu W. Katsuro S. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs Nanoscale Adv. 4 102 110 2022 https://doi.org/10.1039/d1na00299f
[34] W. Lu, N. Nakayama, K. Ito, et al.., “Morphology control and crystalline quality of p-type GaN shells grown on coaxial GaInN/GaN multiple quantum shell nanowires,” ACS Appl. Mater. Interfaces , vol. 13, p. 54486, 2021. https://doi.org/10.1021/acsami.1c13947 . Lu W. Nakayama N. Ito K. Morphology control and crystalline quality of p-type GaN shells grown on coaxial GaInN/GaN multiple quantum shell nanowires ACS Appl. Mater. Interfaces 13 54486 2021 https://doi.org/10.1021/acsami.1c13947
[35] K. Okuno, K. Mizutani, K. Iida, et al.., “MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells,” J. Cryst. Growth , vol. 578, p. 126423, 2022. https://doi.org/10.1016/j.jcrysgro.2021.126423 . Okuno K. Mizutani K. Iida K. MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells J. Cryst. Growth 578 126423 2022 https://doi.org/10.1016/j.jcrysgro.2021.126423
[36] K. Okuno, K. Mizutani, K. Iida, et al.., “Growth defects in inGaN-based multiple-quantum-shell nanowires with Si-doped GaN cap layers and tunnel junctions,” Phys. Status Solidi (b) , vol. 259, no. 6, p. 2100221, 2022. https://doi.org/10.1002/pssb.202100221 . Okuno K. Mizutani K. Iida K. Growth defects in inGaN-based multiple-quantum-shell nanowires with Si-doped GaN cap layers and tunnel junctions Phys. Status Solidi (b) 259 6 2100221 2022 https://doi.org/10.1002/pssb.202100221
[37] Y. J. Hong, C. H. Lee, A. Yoon, et al.., “Visible-color-tunable light-emitting diodes,” Adv. Mater. , vol. 23, pp. 3284-3288, 2011. https://doi.org/10.1002/adma.201100806 . Hong Y. J. Lee C. H. Yoon A. Visible-color-tunable light-emitting diodes Adv. Mater. 23 3284 3288 2011 https://doi.org/10.1002/adma.201100806
[38] Y. Robin, S. Y. Bae, T. V. Shubina, et al.., “Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes,” Sci. Rep. , vol. 8, p. 7311, 2018. https://doi.org/10.1038/s41598-018-25473-x . Robin Y. Bae S. Y. Shubina T. V. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Sci. Rep. 8 7311 2018 https://doi.org/10.1038/s41598-018-25473-x
[39] Y. Miyamoto, W. Lu, N. Sone, et al.., “Crystal growth and characterization of n-GaN in a multiple quantum shell nanowire-based light emitter with a tunnel junction,” ACS Appl. Mater. Interfaces , vol. 13, pp. 37883-37892, 2021. https://doi.org/10.1021/acsami.1c09591 . Miyamoto Y. Lu W. Sone N. Crystal growth and characterization of n-GaN in a multiple quantum shell nanowire-based light emitter with a tunnel junction ACS Appl. Mater. Interfaces 13 37883 37892 2021 https://doi.org/10.1021/acsami.1c09591
[40] Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, “Selective growth of wurtzite GaN and AlxGa1− xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy,” J. Cryst. Growth , vol. 144, pp. 133-140, 1994. https://doi.org/10.1016/0022-0248(94)90448-0 . Kato Y. Kitamura S. Hiramatsu K. Sawaki N. Selective growth of wurtzite GaN and AlxGa1− xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy J. Cryst. Growth 144 133 140 1994 https://doi.org/10.1016/0022-0248(94)90448-0
[41] Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology , vol. 23, p. 465601, 2012. https://doi.org/10.1088/0957-4484/23/46/465601 . Lin Y. T. Yeh T. W. Dapkus P. D. Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition Nanotechnology 23 465601 2012 https://doi.org/10.1088/0957-4484/23/46/465601
[42] D. Li, H. Chen, H. Yu, H. Jia, Q. Huang, and J. Zhou, “Dependence of leakage current on dislocations in GaN-based light-emitting diodes,” J. Appl. Phys. , vol. 96, pp. 1111-1114, 2004. https://doi.org/10.1063/1.1763234 . Li D. Chen H. Yu H. Jia H. Huang Q. Zhou J. Dependence of leakage current on dislocations in GaN-based light-emitting diodes J. Appl. Phys. 96 1111 1114 2004 https://doi.org/10.1063/1.1763234
[43] S. Zhou, J. Lv, Y. Wu, Y. Zhang, C. Zheng, and S. Liu, “Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes,” Jpn. J. Appl. Phys. , vol. 57, p. 051003, 2018. https://doi.org/10.7567/jjap.57.051003 . Zhou S. Lv J. Wu Y. Zhang Y. Zheng C. Liu S. Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes Jpn. J. Appl. Phys. 57 051003 2018 https://doi.org/10.7567/jjap.57.051003
[44] M. Lee, H. U. Lee, K. M. Song, and J. Kim, “Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes,” Sci. Rep. , vol. 9, pp. 1-6, 2019. https://doi.org/10.1038/s41598-019-38664-x . Lee M. Lee H. U. Song K. M. Kim J. Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes Sci. Rep. 9 1 6 2019 https://doi.org/10.1038/s41598-019-38664-x
[45] H. M. Kim, C. Huh, S. W. Kim, N. M. Park, and S. J. Park, “Suppression of leakage current in InGaN/GaN multiple-quantum well LEDs by N 2 O Plasma Treatment,” Electrochem. Solid State Lett. , vol. 7, p. G241, 2004. https://doi.org/10.1149/1.1799957 . Kim H. M. Huh C. Kim S. W. Park N. M. Park S. J. Suppression of leakage current in InGaN/GaN multiple-quantum well LEDs by N 2 O Plasma Treatment Electrochem. Solid State Lett. 7 G241 2004 https://doi.org/10.1149/1.1799957
[46] M. S. Wong, D. Hwang, A. I. Alhassan, et al.., “High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition,” Opt Express , vol. 26, pp. 21324-21331, 2018. https://doi.org/10.1364/oe.26.021324 . Wong M. S. Hwang D. Alhassan A. I. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition Opt Express 26 21324 21331 2018 https://doi.org/10.1364/oe.26.021324
[47] H. Yu, M. H. Memon, H. Jia, et al.., “A 10 × 10 deep ultraviolet light-emitting micro-LED array,” J. Semicond. , vol. 43, p. 062801, 2022. https://doi.org/10.1088/1674-4926/43/6/062801 . Yu H. Memon M. H. Jia H. A 10 × 10 deep ultraviolet light-emitting micro-LED array J. Semicond. 43 062801 2022 https://doi.org/10.1088/1674-4926/43/6/062801
[48] H. Yu, M. H. Memon, D. Wang, et al.., “AlGaN-based deep ultraviolet micro-LED emitting at 275 nm,” Opt. Lett. , vol. 46, pp. 3271-3274, 2021. https://doi.org/10.1364/ol.431933 . Yu H. Memon M. H. Wang D. AlGaN-based deep ultraviolet micro-LED emitting at 275 nm Opt. Lett. 46 3271 3274 2021 https://doi.org/10.1364/ol.431933
[49] Z. Zhuang, D. Iida, M. Velazquez-Rizo, and K. Ohkawa, “Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN,” Opt. Lett. , vol. 46, pp. 5092-5095, 2021. https://doi.org/10.1364/ol.438009 . Zhuang Z. Iida D. Velazquez-Rizo M. Ohkawa K. Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN Opt. Lett. 46 5092 5095 2021 https://doi.org/10.1364/ol.438009
[50] T. W. Yeh, Y. T. Lin, L. S. Stewart, et al.., “InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays,” Nano Lett. , vol. 12, pp. 3257-3262, 2012. https://doi.org/10.1021/nl301307a . Yeh T. W. Lin Y. T. Stewart L. S. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays Nano Lett. 12 3257 3262 2012 https://doi.org/10.1021/nl301307a
[51] M. Tian, H. Yu, M. H. Memon, et al.., “Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall,” Opt. Lett. , vol. 46, pp. 4809-4812, 2021. https://doi.org/10.1364/ol.441285 . Tian M. Yu H. Memon M. H. Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall Opt. Lett. 46 4809 4812 2021 https://doi.org/10.1364/ol.441285
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
오픈액세스 학술지에 출판된 논문
※ AI-Helper는 부적절한 답변을 할 수 있습니다.