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IEEE transactions on nanotechnology, v.2 no.4, 2003년, pp.253 - 257
Lee, Sung-Young (Samsung Electron. Co., Kyungki-Do, South Korea) , Kim, Sung-Min , Yoon, Eun-Jung , Oh, Chang-Woo , Chung, Ilsub , Park, Donggun , Kim, Kinam
We have demonstrated a novel three-dimensional multibridge-channel metal-oxide-semiconductor field-effect transistor (MBCFET). This transistor was successfully fabricated using a conventional complementary metal-oxide-semiconductor process. We introduce the fabrication technologies and electrical characteristics of MBCFET in comparison with a conventional planar MOSFET. The MBCFET has more benefits than a conventional MOSFET. It shows 4.6 times larger current drivability than a planar MOSFET. This is due to the vertically stacked multibridge channels. The subthreshold swing of MBCFET is 61 mV/dec, which is almost an ideal value due to the thin body surrounded by gate. Based on a simulation result, we show that the MBCFET will have a large on-off state current ratio at short channel transistors.
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