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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.25 no.5, 2004년, pp.314 - 316
Jimenez, D. (Dept. d'Enginyeria Electron., Univ. Autonoma de Barcelona, Spain) , Saenz, J.J. , Iniguez, B. , Sune, J. , Marsal, L.F. , Pallares, J.
We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson's equation is obtained in order to deal with all the operation regions tracing properly the transitions between them.
Jiménez, D., Sáenz, J. J., Iñı́quez, B., Suñé, J., Marsal, L. F., Pallarès, J.. Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor. Journal of applied physics, vol.94, no.2, 1061-1068.
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