Novoselov, K. S.
(Department of Physics, University of Manchester, Manchester M13 9PL, UK.)
,
Geim, A. K.
(Department of Physics, University of Manchester, Manchester M13 9PL, UK.)
,
Morozov, S. V.
(Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.)
,
Jiang, D.
(Department of Physics, University of Manchester, Manchester M13 9PL, UK.)
,
Zhang, Y.
(Department of Physics, University of Manchester, Manchester M13 9PL, UK.)
,
Dubonos, S. V.
(Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.)
,
Grigorieva, I. V.
(Department of Physics, University of Manchester, Manchester M13 9PL, UK.)
,
Firsov, A. A.
(Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.)
We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a ...
We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
참고문헌 (20)
IBM J. Res. Dev. 11 45 2001 10.1147/rd.451.0011 C. D. Dimitrakopoulos, D. J. Mascaro, IBM J. Res. Dev.45, 11 (2001).
Chemistry and Physics of Carbon 119 1981 I. L. Spain, in Chemistry and Physics of Carbon, P. L. Walker, P. A. Thrower, Eds. (Dekker, New York, 1981), pp. 119-304.
Crit. Rev. Solid State Mater. Sci. 227 27 2002 10.1080/10408430208500497 O. A. Shenderova, V. V. Zhirnov, D. W. Brenner, Crit. Rev. Solid State Mater. Sci.27, 227 (2002).
Krishnan, A., Dujardin, E., Treacy, M. M. J., Hugdahl, J., Lynum, S., Ebbesen, T. W..
Graphitic cones and the nucleation of curved carbon surfaces.
Nature,
vol.388,
no.6641,
451-454.
Other methods of preparing thin graphitic layers exist. The closest analogs of FLG are nanometer-sized patches of graphene on top of pyrolytic graphite ( 12 13 ) carbon films grown on single-crystal metal substrates ( 14 ) and mesoscopic graphitic disks with thickness down to ∼60 graphene layers ( 8 9 ).
Chem. Phys. Lett. 17 348 2001 10.1016/S0009-2614(01)01066-1 A. M. Affoune et al., Chem. Phys. Lett.348, 17 (2001).
J. Phys. Cond. Matter L605 14 2002 10.1088/0953-8984/14/36/102 K. Harigaya, Y. Kobayashi, K. Takai, J. Ravier, T. Enoki, J. Phys. Cond. Matter14, L605 (2002).
We believe that our thinnest FLG samples (as in Fig. 2A) are in fact zero-gap semiconductors because small nonzero values of δϵ found experimentally can be attributed to inhomogeneous doping which smears the zero-gap state over a small range of V g and leads to finite apparent δϵ.
Proc. IEEE 1940 91 2003 M. R. Stan, P. D. Franzon, S. C. Goldstein, J. C. Lach, M. M. Zeigler, Proc. IEEE91, 1940 (2003).
Supported by the UK Engineering and Physical Sciences Research Council and the Russian Academy of Sciences (S.V.M. S.V.D.). We thank L. Eaves E. Hill and O. Shklyarevskii for discussions and interest.
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