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NTIS 바로가기Science, v.306 no.5696 = no.5696, 2004년, pp.666 - 669
Novoselov, K. S. (Department of Physics, University of Manchester, Manchester M13 9PL, UK.) , Geim, A. K. (Department of Physics, University of Manchester, Manchester M13 9PL, UK.) , Morozov, S. V. (Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.) , Jiang, D. (Department of Physics, University of Manchester, Manchester M13 9PL, UK.) , Zhang, Y. (Department of Physics, University of Manchester, Manchester M13 9PL, UK.) , Dubonos, S. V. (Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.) , Grigorieva, I. V. (Department of Physics, University of Manchester, Manchester M13 9PL, UK.) , Firsov, A. A. (Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.)
We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a ...
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Other methods of preparing thin graphitic layers exist. The closest analogs of FLG are nanometer-sized patches of graphene on top of pyrolytic graphite ( 12 13 ) carbon films grown on single-crystal metal substrates ( 14 ) and mesoscopic graphitic disks with thickness down to ∼60 graphene layers ( 8 9 ).
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See supporting data on Science Online.
Kong, Jing, Franklin, Nathan R., Zhou, Chongwu, Chapline, Michael G., Peng, Shu, Cho, Kyeongjae, Dai, Hongjie. Nanotube Molecular Wires as Chemical Sensors. Science, vol.287, no.5453, 622-625.
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We believe that our thinnest FLG samples (as in Fig. 2A) are in fact zero-gap semiconductors because small nonzero values of δϵ found experimentally can be attributed to inhomogeneous doping which smears the zero-gap state over a small range of V g and leads to finite apparent δϵ.
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Supported by the UK Engineering and Physical Sciences Research Council and the Russian Academy of Sciences (S.V.M. S.V.D.). We thank L. Eaves E. Hill and O. Shklyarevskii for discussions and interest.
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