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NTIS 바로가기IEEE transactions on nuclear science, v.51 no.6 pt.2, 2004년, pp.3767 - 3772
Jun, Bongim (Vanderbilt Univ., Nashville, TN, USA) , Xiong, H.D. , Sternberg, A.L. , Cirba, C.R. , Chen, Dakai , Schrimpf, R.D. , Fleetwood, D.M. , Schwank, J.R. , Cristoloveanu, S.
Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and double gate (DG) mode. The devices exhibit superiority in mobility and drain current when operated in DG mode compared to SG mode. Moreover, the dc characteristics of DG operated device are less vulnerable to total dose radiation induced damage. In particular, radiation-induced interface traps have less electrical effect in DG mode operation.
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