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NTIS 바로가기IEEE transactions on nanotechnology, v.4 no.3, 2005년, pp.369 - 373
Tsutsui, G. (Inst. of Ind. Sci., Univ. of Tokyo, Japan) , Saitoh, M. , Nagumo, T. , Hiramoto, T.
Threshold voltage variation due to quantum confinement effect in ultra-thin body silicon-on-insulator (SOI) MOSFETs is examined. It is experimentally demonstrated that threshold voltage variation drastically increases when SOI layer is thinned down to 3 nm. A percolation model is used to estimate the contribution of surface roughness to Vth variation. The method to suppress the threshold voltage variation is also proposed, and around 15% reduction in threshold voltage variation is experimentally demonstrated by applying substrate bias. The reason of the suppression can be explained by quantum confinement effect induced by substrate bias.
van Dort, M.J., Woerlee, P.H., Walker, A.J., Juffermans, C.A.H., Lifka, H.. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs. IEEE transactions on electron devices, vol.39, no.4, 932-938.
Mizuno, T., Okumtura, J., Toriumi, A.. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's. IEEE transactions on electron devices, vol.41, no.11, 2216-2221.
Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., Saini, S.. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study. IEEE transactions on electron devices, vol.48, no.4, 722-729.
Kumar, Anil, Nagumo, Toshiharu, Tsutsui, Gen, Hiramoto, Toshiro. Analytical model of body factor in short channel bulk MOSFETs for low voltage applications. Solid-state electronics, vol.48, no.10, 1763-1766.
Tsutsui, G., Nagumo, T., Hiramoto, T.. Enhancement of adjustable threshold voltage range by substrate bias due to quantum confinement in ultrathin body SOI pMOSFETs. IEEE transactions on nanotechnology, vol.2, no.4, 314-318.
Fischetti, M. V., Ren, Z., Solomon, P. M., Yang, M., Rim, K.. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness. Journal of applied physics, vol.94, no.2, 1079-1095.
Int Electron Devices Meeting Tech Dig examination of hole mobility in ultrathin body soi mosfets ren 2002 51
Omura, Y., Horiguchi, S., Tabe, M., Kishi, K.. Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.14, no.12, 569-571.
Takagi, S., Takayanagi, M., Toriumi, A.. Characterization of inversion-layer capacitance of holes in Si MOSFET's. IEEE transactions on electron devices, vol.46, no.7, 1446-1450.
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