다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.46 no.4 = no.382, 2009년, pp.21 - 27
가대현 (인천대학교 전자공학과) , 조원주 (광운대학교 전자재료공학과) , 유종근 (인천대학교 전자공학과) , 박종태 (인천대학교 전자공학과)
AI-Helper
In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measure...
* AI 자동 식별 결과로 적합하지 않은 문장이 있을 수 있으니, 이용에 유의하시기 바랍니다.
G. Tsutsui, M. Saitoh, T. Hiramoto, "Impact of SOl thickness fluctuation on threshold voltage variation in ultra-thin body SOl MOSFETs," IEEE Trans. on Nanotech., vol.4, no.3, pp.369-373, 2005
A Xia, H Ru, Z. Xing, W. Yangyuan, "Scaling of lowered source/drain(LSD) and raised source/drain(RSD) ultra-thin body(UTB) SOl MOSFETs," Solid-State Electron, vol.49, pp. 479-483, 2005
J. Knoch, M. Zhang, S. Nantl, and J. Appenzeller, "On the perfonnance of single-gated ultratin-body SOl Schottky-bamer MOSFETs," IEEE Trans. on Electron Devices, vol.53, no.7, pp.1669-1674, 2006
J. Knoch, M. Zhang, J. Appenzeller, and S. Nantl, "Physics of ultrathin-body silicon-on-insulator Schottky-bamer field-effect transistors," Applied Physics, A87, pp.351-357, 2007
S. Xiong, T. King, and l Bokor, "A comparison of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain," IEEE Trans. on Electron Devices, vol.52, no.8, pp.1859-1867, 2005
M. Jang, J. Oh, S. Maeng, and W. Cho, "Characteristics of Erbium-silicided n-type Schottky bamer tunnel transistors," Applied Physics letter, vol.83, no.13, pp.2611-2613, 2003
Rinus T.P. Lee, A.E. Lim, K. Tan, T. Liow, G. Lo, G. Samudra, D. Chi, and Y. Yeo, 'N-channel FinFETs with 25-nm gate length and Schottky-bamer source and drain featuring Ytterbium silicide,' IEEE Electron Device Letters, vol.28, no.2, pp.164-167, 2007
G. Lameu, and E. Dubois, "Schottky-bamer source/drain MOSFETs on ultrathin SOl body with a tungsten metallic midgap gate," IEEE Electron Device Letters, vol.25, no.12, pp.908-803, 2004
C.J. Koeneke, and W.T. Ynch, "Lightly doped Schottky MOSFET," Tech. Dig. of IEDM, pp.466-469, 1982
D. Connelly, C. Fraulkner, D.E. Grupp, and J.S. Harris, "A new route zero bamer metal source/drain MOSFETs," IEEE Trans. on Nanotech., vol.3, no.3, pp.98-104, 2004
lM. Larson, and lP. Snyder, "Overview and status of metal SID Schottky-bamer MOSFET technology," IEEE Trans. on Electron Devices, vol.53, no.5, pp.1048-1058, 2006
B.T. Tsui, and C.P. Lu, "Current transport mechanism of Schottky-bamer and modified Schottky-bamer MOSFETs," Proc. of ESSDERC, pp.307-310, 2007
M. Zhang, J. Knoch, S. Zhang, S. Feste, M. Schroter, and S. Mantl, "Threshold voltage variation in SOl Schottky-bamer MOSFETs," IEEE Trans. on Electron Devices, vol.55, no.3, pp.858-865, 2008
L.E. Calvet, RG. Wheeler, and M.A Reed, "Electron transport measurements of Schottky bamer inhomogeneities," Applied Physics Letters, vol.80, no.10, pp.1761-1763, 2002
G. Groesenken, J.P. Colinge, HE. Maes, and J.C. Aldennan, and S. Holt, "Temperature dependence of threshold voltage in thin-film SOl MOSFET's," IEEE Electron Device Letters, vol. 11, no.8, pp.329-331, 1990
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.