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Small, v.1 no.12, 2005년, pp.1164 - 1168
Lee, Keon Jae (Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, IL 61801, USA, Fax: (+1) 217-244-2278) , Lee, Jaeseob (Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, IL 61801, USA, Fax: (+1) 217-244-2278) , Hwang, Heedon (Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, IL 61801, USA, Fax: (+1) 217-244-2278) , Reitmeier, Zachary J. (Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA) , Davis, Robert F. (Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA) , Rogers, John A. (Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, IL 61801, USA, Fax: (+1) 217-244-2278) , Nuzzo, Ralph G. (Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, IL 618)
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Graphic AbstractFine print: The fabrication of freestanding micro/nanoelements of single-crystalline GaN and a simple process of printing them onto plastic substrates are demonstrated (see SEM image), based on photolithography, plasma etching, and a transfer protocol that uses the releasable adhesiv...
Menard, E., Lee, K. J., Khang, D.-Y., Nuzzo, R. G., Rogers, J. A.. A printable form of silicon for high performance thin film transistors on plastic substrates. Applied physics letters, vol.84, no.26, 5398-5400.
Zhu, Z.-T., Menard, E., Hurley, K., Nuzzo, R. G., Rogers, J. A.. Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates. Applied physics letters, vol.86, no.13, 133507-.
Nano Lett. 2 Sun Y. 1953 10.1021/nl048835l 4
Rogers, John A., Bao, Zhenan, Baldwin, Kirk, Dodabalapur, Ananth, Crone, Brian, Raju, V. R., Kuck, Valerie, Katz, Howard, Amundson, Karl, Ewing, Jay, Drzaic, Paul. Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks. Proceedings of the National Academy of Sciences of the United States of America, vol.98, no.9, 4835-4840.
Melosh, Nicholas A., Boukai, Akram, Diana, Frederic, Gerardot, Brian, Badolato, Antonio, Petroff, Pierre M., Heath, James R.. Ultrahigh-Density Nanowire Lattices and Circuits. Science, vol.300, no.5616, 112-115.
Gelinck, G. H., Geuns, T. C. T., de Leeuw, D. M.. High-performance all-polymer integrated circuits. Applied physics letters, vol.77, no.10, 1487-1489.
Kane, M.G., Campi, J., Hammond, M.S., Cuomo, F.P., Greening, B., Sheraw, C.D., Nichols, J.A., Gundlach, D.J., Huang, J.R., Kuo, C.C., Jia, L., Klauk, H., Jackson, T.N.. Analog and digital circuits using organic thin-film transistors on polyester substrates. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.21, no.11, 534-536.
Huitema, H. E. A., Gelinck, G. H., van der Putten, J. B. P. H., Kuijk, K. E., Hart, C. M., Cantatore, E., Herwig, P. T., van Breemen, A. J. J. M., de Leeuw, D. M.. Plastic transistors in active-matrix displays. Nature, vol.414, no.6864, 599-599.
Thin Film Transistors 2003
Duan, Xiangfeng, Niu, Chunming, Sahi, Vijendra, Chen, Jian, Parce, J. Wallace, Empedocles, Stephen, Goldman, Jay L.. High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature, vol.425, no.6955, 274-278.
Javey, Ali, Guo, Jing, Wang, Qian, Lundstrom, Mark, Dai, Hongjie. Ballistic carbon nanotube field-effect transistors. Nature, vol.424, no.6949, 654-657.
Zhou, Y., Gaur, A., Hur, S.-H., Kocabas, C., Meitl, M. A., Shim, M., Rogers, J. A.. p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.4, no.10, 2031-2035.
Zhang, J., Xu, S., Kumacheva, E.. Photogeneration of Fluorescent Silver Nanoclusters in Polymer Microgels. Advanced materials, vol.17, no.19, 2336-2340.
M. A. Meitl Z. Zhu V. Kumar K. Lee X. Feng Y. Y. Huang R. G. Nuzzo J. A. Rogers Nat. Mater. in press.
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Applied physics letters, vol.64, no.13, 1687-1689.
Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, Sugimoto, Yasunobu. Characteristics of InGaN multi-quantum-well-structure laser diodes. Applied physics letters, vol.68, no.23, 3269-3271.
Shur, M.S, Gaska, R, Bykhovski, A. GaN-based electronic devices. Solid-state electronics, vol.43, no.8, 1451-1458.
GaN and Related Materials 1997
Duan, X., Lieber, C. M.. Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires. Journal of the American Chemical Society, vol.122, no.1, 188-189.
Zhong, Z., Qian, F., Wang, D., Lieber, C. M.. Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.3, no.3, 343-346.
Chen, C.-C., Yeh, C.-C., Chen, C.-H., Yu, M.-Y., Liu, H.-L., Wu, J.-J., Chen, K.-H., Chen, L.-C., Peng, J.-Y., Chen, Y.-F.. Catalytic Growth and Characterization of Gallium Nitride Nanowires. Journal of the American Chemical Society, vol.123, no.12, 2791-2798.
Johnson, Justin C., Choi, Heon-Jin, Knutsen, Kelly P., Schaller, Richard D., Yang, Peidong, Saykally, Richard J.. Single gallium nitride nanowire lasers. Nature materials, vol.1, no.2, 106-110.
Liu, L., Edgar, J.H.. Substrates for gallium nitride epitaxy. Materials science & engineering. a review journal. R, Reports, vol.37, no.3, 61-127.
Nano Lett. 2 Huang Y. 101 10.1021/nl015667d 2
Mater. Res. Soc. Symp. Proc. Reitmeier Z. J. 391 798 2004
Warren Weeks Jr., T., Bremser, Michael D., Ailey, K. Shawn, Carlson, Eric, Perry, William G., Davis, Robert F.. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers. Applied physics letters, vol.67, no.3, 401-403.
Ishikawa, Hiroyasu, Yamamoto, Kensaku, Egawa, Takashi, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi. Thermal stability of GaN on (111) Si substrate. Journal of crystal growth, vol.189, 178-182.
Piau, J.-M., Ravilly, G., Verdier, C.. Peeling of polydimethylsiloxane adhesives at low velocities: Cohesive failure. Journal of polymer science Part B, Polymer physics, vol.43, no.2, 145-157.
Jain, S. C., Willander, M., Narayan, J., Overstraeten, R. Van. III-nitrides: Growth, characterization, and properties. Journal of applied physics, vol.87, no.3, 965-1006.
Group III Nitride Semiconductor Compounds 1998
Sakai, Masahiro, Egawa, Takashi, Hao, Maosheng, Ishikawa, Hiroyasu. Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.43, no.12, 8019-8023.
McAlpine, M. C., Friedman, R. S., Jin, S., Lin, K.-h., Wang, W. U., Lieber, C. M.. High-Performance Nanowire Electronics and Photonics on Glass and Plastic Substrates. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.3, no.11, 1531-1535.
Elements of Strength of Materials 1968
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