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NTIS 바로가기Materials science forum, v.517, 2006년, pp.159 - 164
Munir, Tarriq (University Sains Malaysia (USM)) , Aziz, Azlan Abdul (University Sains Malaysia (USM)) , Abdullah, Mat Johar (University Sains Malaysia (USM)) , Mahmoud Ahmed, Naser (University Sains Malaysia (USM))
We focus on the epi layer carrier concentration variation effects to improve the current - voltage (I-V) characteristics of an n-GaN schottky diode. The carrier concentration of 1×10 15cm-3, 1×1016 cm−3, 1×1017 cm−3 were employed. The simulated current was obtained by...
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