최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기IEEE transactions on electron devices, v.54 no.11, 2007년, pp.3064 - 3070
Lin, Hao-Peng , Hwu, Jenn-Gwo
The Terman method for extracting interface trap density
Hwu, J. G., Wang, W. S.. Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique. Applied physics. A, Solids and surfaces, vol.40, no.1, 41-46.
IEDM Tech Dig using qm-based terman method as a direct index of the lateral nonuniformities of charges in the dielectric layer of mos capacitors lin 2006 297
Semiconductor Physics and Devices neamen 1997
Phys Rev Lett atomic hydrogen reactions with pb centers at the (100) interface stathis 1994 10.1103/PhysRevLett.72.2745 72 2745
Buczko, Ryszard, Pennycook, Stephen J., Pantelides, Sokrates T..
Bonding Arrangements at the
Nissan-Cohen, Y., Gorczyca, T.. The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.9, no.6, 287-289.
Ando, Tsuneya, Fowler, Alan B., Stern, Frank. Electronic properties of two-dimensional systems. Reviews of modern physics, vol.54, no.2, 437-672.
Guzev, A. A., Kurishev, G. L., Sinitsa, S. P.. Scattering mechanisms in inversion channels of MIS structures on silicon. Physica status solidi. A, Applied research, vol.14, no.1, 41-50.
Chu, Yu-Lin, Lin, Da-Wen, Wu, Ching-Yuan. A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFETs. IEEE transactions on electron devices, vol.47, no.2, 348-353.
Li, Hsin-Hsien, Chu, Yu-Lin, Wu, Ching-Yuan. A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices. IEEE transactions on electron devices, vol.44, no.5, 782-791.
Cheng, Shui-Ming, Yih, Cherng-Ming, Yeh, Jun-Chyi, Kuo, Song-Nian, Chung, S.S.. A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions. IEEE transactions on electron devices, vol.44, no.11, 1908-1914.
Chih-Tang Sah, Neugroschel, A., Han, K.M., Kavalieros, J.T.. Profiling interface traps in MOS transistors by the DC current-voltage method. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.17, no.2, 72-74.
Arnold, Emil. Disorder-induced carrier localization in silicon surface inversion layers. Applied physics letters, vol.25, no.12, 705-707.
Chim, Wai-Kim, Lim, Peng-Soon. Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing. IEEE transactions on electron devices, vol.47, no.2, 473-481.
MOS (Metal Oxide Semiconductor) Physics and Technology nicollian 1982
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.