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NTIS 바로가기Journal of applied physics, v.102 no.8, 2007년, pp.084508 -
Jo, Gunho (Gwangju Institute of Science and Technology Department of Materials Science and Engineering, , Gwangju 500-712, Korea) , Maeng, Jongsun (Gwangju Institute of Science and Technology Department of Materials Science and Engineering, , Gwangju 500-712, Korea) , Kim, Tae-Wook (Gwangju Institute of Science and Technology Department of Materials Science and Engineering, , Gwangju 500-712, Korea) , Hong, Woong-Ki (Gwangju Institute of Science and Technology Department of Materials Science and Engineering, , Gwangju 500-712, Korea) , Choi, Byung-Sang (Gwangju Institute of Science and Technology Department of Materials Science and Engineering, , Gwangju 500-712, Korea) , Lee, Takhee (Gwangju Institute of Science and Technology Department of Materials Science and Engineering, , Gwangju 500-712, Korea)
We demonstrate the scaling properties of the gate-bias-dependent transfer characteristics of In2O3 nanowire field effect transistors (FETs) studied using a conducting atomic force microscope. The contact resistance was extracted from the scaling of the resistance of an In2O3 nanowire FET with respec...
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