최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.39 no.10 = no.304, 2002년, pp.1 - 8
이성원 (이화여자대학교 정보통신학과) , 이승준 (이화여자대학교 전자공학과) , 신형순 (이화여자대학교 전자공학과)
C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L
B.J. Sheu and P.K. Ko, 'A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's' IEEE Electron Device Lett., Vol. EDL-5, p. 491, 1984
P. Vitanov, U. Schwabe and I, Eisele, 'Electrical Characterize of Feature Sizes and Parasitic Capacitances Using a Single Test Structure,' IEEE Trans, Electron Devices, Vol. ED-31, p. 96, 1984
C.T. Yao, I.A. Mack and H.C. Lin, 'Accuracy of Effective Channel-Length Extraction Using the Capacitance Method' IEEE Electron Devices Lett., Vol.EDL-7, p.268, 1986
P. Viatanove, T. Dimitrova, R. Kamburova and K. Filljov, 'Capacitance Method for determination of LDD MOSFET Geometrical Parameters,; Soild-State Electronics, Vol. 35, p. 985, 1992
J.-C, Guo, S. S-S. Chung, and C. C.-H, Hsu, 'A New Approach to Determine the Effective Channel Length and the Drain-and-Source Series Resistance of Minaturized MOSFET's' IEEE Trans Electron Devices, Vol. 41, p. 403, 1994
L. Selmi, E. Sangiori and B. Ricco, 'Parameter extraction from I-V Characteristics of single MOSFET's' IEEE Trans Electron Devices, Vol.36, p.1094, 1989
R Narayanan, 'Two-dimensional nurmerical analysis for extracting the effective channel lenth of shor-channel MOSFETs', Solid-state Eletronics, Vol. 38, p. 1155, 1995
MEDICI Manual (version 4.0.0)
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