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NTIS 바로가기半導體技術 = Semiconductor Technology, v.32 no.10, 2007년, pp.867 - 870
TIAN, Aihua (Hebei Semiconductor Research Institute) , ZHAO, Tong (Hebei Semiconductor Research Institute) , PAN, Hongshu (Hebei Semiconductor Research Institute) , CHEN, Hao (Hebei Semiconductor Research Institute) , LI, Dang (Hebei Semiconductor Research Institute) , HUO, Yuzhu (Hebei Semiconductor Research Institute)
The fabrication and electrical characteristics of n~+-SiC/Ti/Pt contact were presented,in which the n~+-SiC epilayer was grown on 7.86°off-axis 4H-SiC substrate by chemical vapor deposition(CVD).The best result obtained for specific contact resistivity is 2.59×10~(-6)Ω·cm~2,good enough for SiC devic...
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