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NTIS 바로가기Nanotechnology, v.21 no.20, 2010년, pp.205201 -
Cho, Chu-Young (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea) , Kwon, Min-Ki (Department of Photonic Engineering, Chosun University, Gwangju 501-759, Korea) , Lee, Sang-Jun (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea) , Han, Sang-Heon (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea) , Kang, Jang-Won (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea) , Kang, Se-Eun (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea) , Lee, Dong-Yul (Samsung LED Co. Ltd, Suwon 443-743, Korea) , Park, Seong-Ju (Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea)
We demonstrate the surface plasmon-enhanced blue light-emitting diodes (LEDs) using Ag nanoparticles embedded in p-GaN. A large increase in optical output power of 38% is achieved at an injection current of 20 mA due to an improved internal quantum efficiency of the LEDs. The enhancement of opt...
2003 Light-Emitting Diodes Schubert E F
Speck, J.S., Rosner, S.J.. The role of threading dislocations in the physical properties of GaN and its alloys. Physica. B, Condensed matter, vol.273, 24-32.
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Okamoto, Koichi, Niki, Isamu, Shvartser, Alexander, Narukawa, Yukio, Mukai, Takashi, Scherer, Axel. Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nature materials, vol.3, no.9, 601-605.
Okamoto, Koichi, Niki, Isamu, Scherer, Axel, Narukawa, Yukio, Mukai, Takashi, Kawakami, Yoichi. Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy. Applied physics letters, vol.87, no.7, 071102-.
Neogi, Arup, Lee, Chang-Won, Everitt, Henry O., Kuroda, Takamasa, Tackeuchi, Atsushi, Yablonovitch, Eli. Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling. Physical review. B, Condensed matter and materials physics, vol.66, no.15, 153305-.
Kwon, Min-Ki, Kim, Ja-Yeon, Kim, Baek-Hyun, Park, Il-Kyu, Cho, Chu-Young, Byeon, Clare Chisu, Park, Seong-Ju. Surface-Plasmon-Enhanced Light-Emitting Diodes. Advanced materials, vol.20, no.7, 1253-1257.
Gontijo, I., Boroditsky, M., Yablonovitch, E., Keller, S., Mishra, U. K., DenBaars, S. P.. Coupling of InGaN quantum-well photoluminescence to silver surface plasmons. Physical review. B, Condensed matter and materials physics, vol.60, no.16, 11564-11567.
Yeh, Dong-Ming, Huang, Chi-Feng, Chen, Cheng-Yen, Lu, Yen-Cheng, Yang, C. C.. Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode. Applied physics letters, vol.91, no.17, 171103-.
Cheng, Peihong, Li, Dongsheng, Yuan, Zhizhong, Chen, Peiliang, Yang, Deren. Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film. Applied physics letters, vol.92, no.4, 041119-.
Kim, Beak-Hyun, Cho, Chang-Hee, Mun, Jin-Soo, Kwon, Min-Ki, Park, Tae-Young, Kim, Jong Su, Byeon, Clare Chisu, Lee, Jongmin, Park, Seong-Ju. Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons. Advanced materials, vol.20, no.16, 3100-3104.
Sharma, Pradeep, Liu, C. Y., Hsu, Chen-Feng, Liu, N. W., Wang, Y. L.. Ordered arrays of Ag nanoparticles grown by constrained self-organization. Applied physics letters, vol.89, no.16, 163110-.
Weimer, W. A., Dyer, M. J.. Tunable surface plasmon resonance silver films. Applied physics letters, vol.79, no.19, 3164-3166.
Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J.. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes. Applied physics letters, vol.78, no.12, 1685-1687.
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