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NTIS 바로가기IEEE transactions on electron devices, v.57 no.10, 2010년, pp.2398 - 2404
Ho-Myoung An (Sch. of Electr. Eng., Korea Univ., Seoul, South Korea) , Eui Bok Lee (Sch. of Electr. Eng., Korea Univ., Seoul, South Korea) , Hee-Dong Kim (Sch. of Electr. Eng., Korea Univ., Seoul, South Korea) , Yu Jeong Seo (Sch. of Electr. Eng., Korea Univ., Seoul, South Korea) , Tae Geun Kim (Sch. of Electr. Eng., Korea Univ., Seoul, South Korea)
This paper presents a new class of charge-trap Flash memory device with resistive switching mechanisms. We propose a fused memory scheme using a structure of metal/Pr0.7Ca0.3MnO3 (PCMO)/nitride/oxide/silicon to graft fast-switching features of resistive random access memory onto high-density silicon...
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