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NTIS 바로가기Journal of the Electrochemical Society : JES, v.158 no.1, 2011년, pp.H21 -
Kim, Hyungchul , Woo, Sanghyun , Lee, Jaesang , Kim, Yongchan , Lee, Hyerin , Choi, Ik-Jin , Kim, Young-Do , Chung, Chin-Wook , Jeon, Hyeongtag
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Ritala, Mikko, Kukli, Kaupo, Rahtu, Antti, Räisänen, Petri I., Leskelä, Markku, Sajavaara, Timo, Keinonen, Juhani. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources. Science, vol.288, no.5464, 319-321.
Gordon, R.G., Hausmann, D., Kim, E., Shepard, J.. A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches. Chemical vapor deposition : CVD, vol.9, no.2, 73-78.
Kingon, Angus I., Maria, Jon-Paul, Streiffer, S. K.. Alternative dielectrics to silicon dioxide for memory and logic devices. Nature, vol.406, no.6799, 1032-1038.
Suntola, T.. Atomic layer epitaxy. Materials science reports, vol.4, no.5, 261-312.
Jeon, Hyeongtag, Won, Youngdo. The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process. Applied physics letters, vol.93, no.12, 124104-.
Jaime-Vasquez, M., Martinka, M., Stoltz, A.J., Jacobs, R.N., Benson, J.D., Almeida, L.A., Markunas, J.K.. Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors. Journal of electronic materials, vol.37, no.9, 1247-1254.
Kim, H., Jung, S.J., Han, Y.H., Lee, H.Y., Kim, J.N., Jang, D.S., Lee, J.J.. The effect of inductively coupled plasma treatment on the surface activation of polycarbonate substrate. Thin solid films, vol.516, no.11, 3530-3533.
M. A. Liebermann and A. J. Lichtenberg , Principles of Plasma Discharges and Material Processing , John Wiley & Sons, New York (1994).
Tang, Deli, Chu, Paul K.. Current control for magnetized plasma in direct-current plasma-immersion ion implantation. Applied physics letters, vol.82, no.13, 2014-2016.
1044-677X J. Res. Natl. Inst. Stand. Technol. Olthoff 100 383 1995 10.6028/jres.100.029
Ohtsu, Y., Hino, Y., Misawa, T., Fujita, H., Yukimura, K., Akiyama, M.. Influence of ion-bombardment-energy on thin zirconium oxide films prepared by dual frequency oxygen plasma sputtering. Surface & coatings technology, vol.201, no.15, 6627-6630.
Fountain, G. G., Hattangady, S. V., Rudder, R. A., Markunas, R. J., Lucovsky, G., Kim, S. S., Tsu, D. V.. Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films. Journal of vacuum science & technology. an official journal of the American Vacuum Society. A, Vacuum, surfaces, and films, vol.7, no.3, 576-580.
Lucovsky, G., Kim, S. S., Tsu, D. V., Fountain, G. G., Markunas, R. J.. The effects of subcutaneous oxidation at the interfaces between elemental and compound semiconductors and SiO2 thin films deposited by remote plasma enhanced chemical vapor deposition. Journal of vacuum science & technology an official journal of the American Vacuum Society. B, Microelectronics processing and phenomena, vol.7, no.4, 861-869.
Godyak, V. A., Piejak, R. B., Alexandrovich, B. M.. Evolution of the electron-energy-distribution function during rf discharge transition to the high-voltage mode. Physical review letters, vol.68, no.1, 40-43.
Berezhnoi, S.V., Kaganovich, I.D., Misina, M., Bogaerts, A., Gijbels, R.. Semianalytical description of nonlocal secondary electrons in a radio frequency capacitively coupled plasma at intermediate pressures. IEEE transactions on plasma science, vol.27, no.5, 1339-1347.
He, G., Zhu, L.Q., Liu, M., Fang, Q., Zhang, L.D.. Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films. Applied surface science, vol.253, no.7, 3413-3418.
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