참고문헌 (49)

1. Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., Keszler, D. A.. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Applied physics letters, vol.86, no.1, 013503-.

   상세보기

2. Nomura, Kenji, Ohta, Hiromichi, Takagi, Akihiro, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, vol.432, no.7016, 488-492.

   상세보기

3. Yabuta, Hisato, Sano, Masafumi, Abe, Katsumi, Aiba, Toshiaki, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Applied physics letters, vol.89, no.11, 112123-.

   상세보기

4. Suresh, Arun, Wellenius, Patrick, Dhawan, Anuj, Muth, John. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. Applied physics letters, vol.90, no.12, 123512-.

   상세보기

5. Suresh, A., Muth, J. F.. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Applied physics letters, vol.92, no.3, 033502-.

   상세보기

6. Kimura, Mutsumi, Nakanishi, Takashi, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo. Trap densities in amorphous-InGaZnO4 thin-film transistors. Applied physics letters, vol.92, no.13, 133512-.

   상세보기

7. Nomura, Kenji, Kamiya, Toshio, Yanagi, Hiroshi, Ikenaga, Eiji, Yang, Ke, Kobayashi, Keisuke, Hirano, Masahiro, Hosono, Hideo. Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy. Applied physics letters, vol.92, no.20, 202117-.

   상세보기

8. Fujii, Mami, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi, Jung, Ji Sim, Kwon, Jang Yeon. Thermal Analysis of Degradation in Ga₂O₃-In₂O₃-ZnO Thin-Film Transistors. Japanese journal of applied physics, vol.47, no.r8, 6236-.

   상세보기

9. Kamiya, Toshio, Nomura, Kenji, Hirano, Masahiro, Hosono, Hideo. Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO_4–x : Optical analyses and first-principle calculations. Physica status solidi. PSS. C, Current topics in solid state physics, vol.5, no.9, 3098-3100.

   상세보기

10. Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo. Electronic structure of the amorphous oxide semiconductor a-InGaZnO_4–x : Tauc–Lorentz optical model and origins of subgap states. Physica status solidi. PSS. A, Applications and materials science, vol.206, no.5, 860-867.

    상세보기

11. Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, Kaneko, Setsuo. Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO₄ Thin-Film Transistors. Japanese journal of applied physics, vol.48, no.r1, 011301-.

    상세보기

12. Jeong, Jae Kyeong, Won Yang, Hui, Jeong, Jong Han, Mo, Yeon-Gon, Kim, Hye Dong. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Applied physics letters, vol.93, no.12, 123508-.

    상세보기

13. Lopes, M. E., Gomes, H. L., Medeiros, M. C. R., Barquinha, P., Pereira, L., Fortunato, E., Martins, R., Ferreira, I.. Gate-bias stress in amorphous oxide semiconductors thin-film transistors. Applied physics letters, vol.95, no.6, 063502-.

    상세보기

14. Moon, Yeon-Keon, Lee, Sih, Kim, Woong-Sun, Kang, Byung-Woo, Jeong, Chang-Oh, Lee, Dong-Hoon, Park, Jong-Wan. Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator. Applied physics letters, vol.95, no.1, 013507-.

    상세보기

15. Lee, Jaeseob, Park, Jin-Seong, Pyo, Young Shin, Lee, Dong Bum, Kim, Eun Hyun, Stryakhilev, Denis, Kim, Tae Woong, Jin, Dong Un, Mo, Yeon-Gon. The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors. Applied physics letters, vol.95, no.12, 123502-.

    상세보기

16. Lee, Jeong-Min, Cho, In-Tak, Lee, Jong-Ho, Cheong, Woo-Seok, Hwang, Chi-Sun, Kwon, Hyuck-In. Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics. Applied physics letters, vol.94, no.22, 222112-.

    상세보기

17. Hosono, H., Nomura, K., Ogo, Y., Uruga, T., Kamiya, T.. Factors controlling electron transport properties in transparent amorphous oxide semiconductors. Journal of non-crystalline solids, vol.354, no.19, 2796-2800.

    상세보기

18. Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, Kaneko, Setsuo. Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO₄ Thin-Film Transistors. Japanese journal of applied physics, vol.48, no.r1, 010203-.

    상세보기

19. Fung, Tze-Ching, Chuang, Chiao-Shun, Nomura, Kenji, Shieh, Han-Ping David, Hosono, Hideo, Kanicki, Jerzy. Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors. Journal of information display, vol.9, no.4, 21-29.

    원문보기 상세보기

20. Lee, Kwang-Hee, Jung, Ji Sim, Son, Kyoung Seok, Park, Joon Seok, Kim, Tae Sang, Choi, Rino, Jeong, Jae Kyeong, Kwon, Jang-Yeon, Koo, Bonwon, Lee, Sangyun. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors. Applied physics letters, vol.95, no.23, 232106-.

    상세보기

21. Nomura, Kenji, Kamiya, Toshio, Ohta, Hiromichi, Uruga, Tomoya, Hirano, Masahiro, Hosono, Hideo. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations. Physical review. B, Condensed matter and materials physics, vol.75, no.3, 035212-.

    상세보기

22. Lee, W.J., Ryu, B., Chang, K.J.. Electronic structure of oxygen vacancy in crystalline InGaO₃(ZnO)_m. Physica. B, Condensed matter, vol.404, no.23, 4794-4796.

    상세보기

23. Ryu, Byungki, Noh, Hyeon-Kyun, Choi, Eun-Ae, Chang, K. J.. O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Applied physics letters, vol.97, no.2, 022108-.

    상세보기

24. Perdew, John P., Wang, Yue. Accurate and simple analytic representation of the electron-gas correlation energy. Physical review. B, Condensed matter, vol.45, no.23, 13244-13249.

    상세보기

25. Blöchl, P. E.. Projector augmented-wave method. Physical review. B, Condensed matter, vol.50, no.24, 17953-17979.

    상세보기

26. Kresse, G., Furthmüller, J.. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set. Physical review. B, Condensed matter, vol.54, no.16, 11169-11186.

    상세보기

27. Kresse, G., Joubert, D.. From ultrasoft pseudopotentials to the projector augmented-wave method. Physical review. B, Condensed matter and materials physics, vol.59, no.3, 1758-1775.

    상세보기

28. Zhao, Xinyuan, Ceresoli, Davide, Vanderbilt, David. Structural, electronic, and dielectric properties of amorphous $ \mathrm{Zr}\mathrm{O}_{2}$ fromab initiomolecular dynamics. Physical review. B, Condensed matter and materials physics, vol.71, no.8, 085107-.

    상세보기

29. Nosé, Shuichi. A unified formulation of the constant temperature molecular dynamics methods. The Journal of chemical physics, vol.81, no.1, 511-519.

    상세보기

30. Nosé, Shuichi. Constant Temperature Molecular Dynamics Methods. Progress of theoretical physics. Supplement, vol.103, 1-46.

    상세보기

31. Ashkenov, N., Mbenkum, B. N., Bundesmann, C., Riede, V., Lorenz, M., Spemann, D., Kaidashev, E. M., Kasic, A., Schubert, M., Grundmann, M., Wagner, G., Neumann, H., Darakchieva, V., Arwin, H., Monemar, B.. Infrared dielectric functions and phonon modes of high-quality ZnO films. Journal of applied physics, vol.93, no.1, 126-133.

    상세보기

32. Dudarev, S. L., Botton, G. A., Savrasov, S. Y., Humphreys, C. J., Sutton, A. P.. Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. Physical review. B, Condensed matter and materials physics, vol.57, no.3, 1505-1509.

    상세보기

33. Janotti, Anderson, Van de Walle, Chris G.. Oxygen vacancies in ZnO. Applied physics letters, vol.87, no.12, 122102-.

    상세보기

34. Janotti, Anderson, Van de Walle, Chris G.. Native point defects in ZnO. Physical review. B, Condensed matter and materials physics, vol.76, no.16, 165202-.

    상세보기

35. Albanesi, E. A., Sferco, S. J., Lefebvre, I., Allan, G., Hollinger, G.. Electronic structure of binary and ternary Ga or As oxides. Physical review. B, Condensed matter, vol.46, no.20, 13260-13267.

    상세보기

36. McGuinness, Cormac, Stagarescu, Cristian B., Ryan, Philip J., Downes, James E., Fu, Dongfeng, Smith, Kevin E., Egdell, R. G.. Influence of shallow core-level hybridization on the electronic structure of post-transition-metal oxides studied using soft X-ray emission and absorption. Physical review. B, Condensed matter and materials physics, vol.68, no.16, 165104-.

    상세보기

37. Perdew, John P., Ernzerhof, Matthias, Burke, Kieron. Rationale for mixing exact exchange with density functional approximations. The Journal of chemical physics, vol.105, no.22, 9982-9985.

    상세보기

38. Van de Walle, Chris G., Neugebauer, Jörg. First-principles calculations for defects and impurities: Applications to III-nitrides. Journal of applied physics, vol.95, no.8, 3851-3879.

    상세보기

39. Lee, W.-J., Choi, E.-A., Bang, J., Ryu, B., Chang, K. J.. Structural and electronic properties of crystalline InGaO3(ZnO)m. Applied physics letters, vol.93, no.11, 111901-.

    상세보기

40. Luo, W. K., Sheng, H. W., Ma, E.. Pair correlation functions and structural building schemes in amorphous alloys. Applied physics letters, vol.89, no.13, 131927-.

    상세보기

41. Cho, Deok-Yong, Song, Jaewon, Na, Kwang Duk, Hwang, Cheol Seong, Jeong, Jong Han, Jeong, Jae Kyeong, Mo, Yeon-Gon. Local structure and conduction mechanism in amorphous In-Ga-Zn-O films. Applied physics letters, vol.94, no.11, 112112-.

    상세보기

42. Jeong, Sunho, Ha, Young-Geun, Moon, Jooho, Facchetti, Antonio, Marks, Tobin J.. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors. Advanced materials, vol.22, no.12, 1346-1350.

    상세보기

43. Clark, S. J., Robertson, J., Lany, S., Zunger, A.. Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals. Physical review. B, Condensed matter and materials physics, vol.81, no.11, 115311-.

    상세보기

44. Singh, Abhishek Kumar, Janotti, Anderson, Scheffler, Matthias, Van de Walle, Chris G.. Sources of Electrical Conductivity in $ \mathrm{SnO}_{2}$. Physical review letters, vol.101, no.5, 055502-.

    상세보기

45. Carrasco, J., Lopez, N., Illas, F.. First Principles Analysis of the Stability and Diffusion of Oxygen Vacancies in Metal Oxides. Physical review letters, vol.93, no.22, 225502-.

    상세보기

46. Van de Walle, Chris G.. Hydrogen as a Cause of Doping in Zinc Oxide. Physical review letters, vol.85, no.5, 1012-1015.

    상세보기

47. Sato, Ayumu, Abe, Katsumi, Hayashi, Ryo, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo. Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor. Applied physics letters, vol.94, no.13, 133502-.

    상세보기

48. Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo. Subgap states, doping and defect formation energies in amorphous oxide semiconductor a‐InGaZnO₄ studied by density functional theory. Physica status solidi. PSS. A, Applications and materials science, vol.207, no.7, 1698-1703.

    상세보기

49. Liu, Po-Tsun, Chou, Yi-Teh, Teng, Li-Feng, Li, Fu-Hai, Shieh, Han-Ping. Nitrogenated amorphous InGaZnO thin film transistor. Applied physics letters, vol.98, no.5, 052102-.

    상세보기