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NTIS 바로가기Vacuum, v.86 no.4, 2011년, pp.403 - 408
Woo, J.C. (School of Electrical and Electronics Engineering, Chung-Ang University, 221 Heukseok-Dong, Dongjak-Gu, Seoul 156-756, Republic of Korea) , Kim, S.H. (School of Electrical and Electronics Engineering, Chung-Ang University, 221 Heukseok-Dong, Dongjak-Gu, Seoul 156-756, Republic of Korea) , Kim, C.I.
In this study, we carried out an investigation in the etching characteristics of TiN thin films in a C12/Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 nm/min at a gas mixing ratio of C12 (75%)/Ar (25%). At the same time, the etch rate was measured as fun...
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