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Procedia engineering, v.32, 2012년, pp.752 - 758
Chananonnawathorn, C. (Department of Physics, Faculty of Science and Technology, Thammasat University, Prathumthani, 12121 Thailand) , Pudwat, S. (Department of Physics, Faculty of Science and Technology, Thammasat University, Prathumthani, 12121 Thailand) , Horprathum, M. (Optical Thin- Film Laboratory, National Electronics and Computer Technology Center, Pathumthani, 12120 Thailand) , Eiamchai, P. (Optical Thin- Film Laboratory, National Electronics and Computer Technology Center, Pathumthani, 12120 Thailand) , Limnontakul, P. (Department of Physics, Faculty of Science, Srinakharinwirot University, Bangkok 10110, Thailand) , Salawan, C. (Division of physic, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Pathumthani 12110, Thailand) , Aiempanakit, K. (Department of Physics, Faculty of Science and Technology, Thammasat University, Prathumthani, 12121 Thailand)
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AbstractTungsten oxide films (WO3) were deposited on ITO/glass substrates with tungsten target in UHV by d.c. reactive magnetron sputtering. The WO3 films were deposited at various O2 flow rates from 5 to 20sccm and various film thicknesses from 50 to 500nm at 10 mTorr operating pressure as controll...
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