Pattern collapse phenomenon was first time observed in BEOL application with the integration of ultra low-k film scheme. With the dimension and pitch shrinkage, the pattern collapse defects are getting worse during wet clean process. In this study, the line collapse defects can be significantly redu...
Pattern collapse phenomenon was first time observed in BEOL application with the integration of ultra low-k film scheme. With the dimension and pitch shrinkage, the pattern collapse defects are getting worse during wet clean process. In this study, the line collapse defects can be significantly reduced by adding surfactant solution to the rinse liquid. Moreover, higher aspect ratio (>4) will also deteriorate the collapse window. In addition, the kink or bowing trench profile will induce localized stress at the interface. Accordingly, optimization of both wet clean and dry etch process are the successful keys to solve line collapse issue toward future generation and beyond.
Pattern collapse phenomenon was first time observed in BEOL application with the integration of ultra low-k film scheme. With the dimension and pitch shrinkage, the pattern collapse defects are getting worse during wet clean process. In this study, the line collapse defects can be significantly reduced by adding surfactant solution to the rinse liquid. Moreover, higher aspect ratio (>4) will also deteriorate the collapse window. In addition, the kink or bowing trench profile will induce localized stress at the interface. Accordingly, optimization of both wet clean and dry etch process are the successful keys to solve line collapse issue toward future generation and beyond.
참고문헌 (3)
10.1117/12.600039 P. Zhang, M. Jaramillo Jr., M. B. Rao, B. Ross and B. Horvath, Proc. SPIE 5753, 1018-1023, (2005).
V. Huang, C.C. Chiu, C.A. Lin, C.Y. Chang, T.S. Gau and Burn J. Lin, Proc. SPIE 6519, 65193C-1-65193C-9, (2007).
10.1117/12.711951 J.S. Kim, W. Chang, S.W. Park and H.K. Oh, Proc. SPIE 6519, 65193Y-1-65193Y-7, (2007).
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