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Microelectronic engineering, v.102, 2013년, pp.74 - 80
Prasanna Venkatesh, R. , Kwon, T.Y. , Nagendra Prasad, Y. , Ramanathan, S. , Park, J.G.
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The cleaning of copper surface after chemical mechanical planarization (CMP) process is a critical step since the surface would be contaminated by a large number of slurry particles such as silica or alumina and organic residues such as benzo triazole (BTA). The presence of organic residues results ...
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