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NTIS 바로가기Journal of display technology, v.10 no.1, 2014년, pp.27 - 32
Shoou-Jinn Chang (Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan) , Chang, L. M. (Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan) , Kuo, D. S. (Epistar Corp., Tainan, Taiwan) , Ko, T. K. (Epistar Corp., Tainan, Taiwan) , Hon, S. J. (Epistar Corp., Tainan, Taiwan) , Shuguang Li (Coll. of Sci., China Univ. of Pet. (East China), Qingdao, China)
The authors propose a simple method to enhance the performances of GaN-based light-emitting diodes (LEDs) with rough surface. By using KOH to selectively smooth the area beneath the p-contact pad, it was found that we could reduce the forward voltage and enhance output power of the GaN-based LEDs. I...
Shei, Shih-Chang, Lai, Wei-Chih, Sheu, Jinn-Kong, Hung, I-Hsiu, Chang, Shoou-Jinn. The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads. Japanese journal of applied physics, vol.48, no.10, 102103-.
Arif, R.A., Hongping Zhao, Yik-Khoon Ee, Tansu, N.. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes. IEEE journal of quantum electronics, vol.44, no.6, 573-580.
Wang, C. K., Chiang, T. H., Chen, K. Y., Chiou, Y. Z., Lin, T. K., Chang, S. P., Chang, S. J.. Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs With Different Quantum Barrier Thickness. Journal of display technology, vol.9, no.4, 206-211.
Choi, Suk, Ji, Mi-Hee, Kim, Jeomoh, Jin Kim, Hee, Satter, Md. M., Yoder, P. D., Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers. Applied physics letters, vol.101, no.16, 161110-.
Guangyu Liu, Jing Zhang, Chee Keong Tan, Tansu, N.. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes. IEEE photonics journal, vol.5, no.2, 2201011-2201011.
Hsu, Shun-Cheng, Lee, Chong-Yi, Hwang, Jung-Min, Su, Juh-Yuh, Wuu, Dong-Sing, Horng, Ray-Hua. Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.18, no.23, 2472-2474.
Chiu, Ching-Hua, Lo, Ming-Hua, Lu, Tien-Chang, Yu, Peichen, Huang, H. W., Kuo, Hao-Chung, Wang, Shing-Chung. Nano-Processing Techniques Applied in GaN-Based Light-Emitting Devices With Self-Assembly Ni Nano-Masks. Journal of lightwave technology : a joint IEEE/OSA publication, vol.26, no.11, 1445-1454.
Chen, Jiun-Ting, Lai, Wei-Chih, Chang, Yun-Chorng, Sheu, Jinn-Kong, Sen, Wen-Chih. GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition. Applied physics letters, vol.101, no.13, 131103-.
IEEE J Sel Topic Quantum Electron Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses ee 2009 10.1109/JSTQE.2009.2015580 15 1218
Ee, Yik-Khoon, Kumnorkaew, Pisist, Arif, Ronald A., Tong, Hua, Gilchrist, James F., Tansu, Nelson. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics express, vol.17, no.16, 13747-.
Zhu, Peifen, Liu, Guangyu, Zhang, Jing, Tansu, Nelson. FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays. Journal of display technology, vol.9, no.5, 317-323.
Wu, L.W., Chang, S.J., Wen, T.C., Su, Y.K., Chen, J.F., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K.. Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes. IEEE journal of quantum electronics, vol.38, no.5, 446-450.
Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Sheu, J.K., Wen, T.C., Lai, W.C., Chen, J.R., Tsai, J.M.. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes. IEEE journal on selected topics in quantum electronics : a publication of the IEEE Communications Society, vol.8, no.4, 744-748.
Chung-Hsun Jang, Jinn-Kong Sheu, Tsai, C.M., Shoou-Jinn Chang, Wei-Chih Lai, Ming-Lun Lee, Ko, T.K., Shen, C.F., Shei, S.C.. Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer. IEEE journal of quantum electronics, vol.46, no.4, 513-517.
Lee, Y.J., Hwang, J.M., Hsu, T.C., Hsieh, M.H., Jou, M.J., Lee, B.J., Lu, T.C., Kuo, H.C., Wang, S.C.. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.18, no.10, 1152-1154.
Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., Nakamura, S.. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Applied physics letters, vol.84, no.6, 855-857.
Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lin, Y.C., Shei, S.C., Lo, H.M., Lin, H.Y., Ke, J.C.. Highly reliable nitride-based LEDs with SPS+ITO upper contacts. IEEE journal of quantum electronics, vol.39, no.11, 1439-1443.
Chang, S.J., Wu, L.W., Su, Y.K., Hsu, Y.P., Lai, W.C., Tsai, J.M., Sheu, J.K., Lee, C.T.. Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.16, no.6, 1447-1449.
Feezell, D. F., Speck, J. S., DenBaars, S. P., Nakamura, S..
Semipolar
David, Aurelien. Surface-Roughened Light-Emitting Diodes: An Accurate Model. Journal of display technology, vol.9, no.5, 301-316.
Chang, S.J., Lai, W.C., Su, Y.K., Chen, J.F., Liu, C.H., Liaw, U.H.. InGaN-GaN multiquantum-well blue and green light-emitting diodes. IEEE journal on selected topics in quantum electronics : a publication of the IEEE Communications Society, vol.8, no.2, 278-283.
Zhao, Hongping, Liu, Guangyu, Zhang, Jing, Poplawsky, Jonathan D., Dierolf, Volkmar, Tansu, Nelson. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics express, vol.19, no.4, A991-.
Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, Nagahama, Shin-ichi. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. Applied physics letters, vol.67, no.13, 1868-1870.
Xiao-Hang Li, Peifen Zhu, Guangyu Liu, Jing Zhang, Renbo Song, Yik-Khoon Ee, Kumnorkaew, P., Gilchrist, J. F., Tansu, N..
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed
Wierer Jr, Jonathan J., David, Aurelien, Megens, Mischa M.. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nature photonics, vol.3, no.3, 163-169.
Jewell, Jason, Simeonov, Dobri, Huang, Shih-Chieh, Hu, Yan-Ling, Nakamura, Shuji, Speck, James, Weisbuch, Claude. Double embedded photonic crystals for extraction of guided light in light-emitting diodes. Applied physics letters, vol.100, no.17, 171105-.
Tsai, C.M., Sheu, J.K., Lai, W.C., Hsu, Y.P., Wang, P.T., Kuo, C.T., Kuo, C.W., Chang, S.J., Su, Y.K.. Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.26, no.7, 464-466.
Liu, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Wu, L.W., Lin, C.C.. Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface. Materials science & engineering B, Solid-state materials for advanced technology, vol.112, no.1, 10-13.
Chang, S.J., Chen, C.H., Chang, P.C., Su, Y.K., Chen, P.C., Jhou, Y.D., Hung, H., Wang, S.M., Luang, B.R.. Nitride-based LEDs with p-InGaN capping layer. IEEE transactions on electron devices, vol.50, no.12, 2567-2570.
Hsu, Y.P., Chang, S.J., Su, Y.K., Chen, S.C., Tsai, J.M., Lai, W.C., Kuo, C.H., Chang, C.S.. InGaN-GaN MQW LEDs with Si treatment. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.17, no.8, 1620-1622.
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