참고문헌 (30)

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5. Guangyu Liu, Jing Zhang, Chee Keong Tan, Tansu, N.. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes. IEEE photonics journal, vol.5, no.2, 2201011-2201011.

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6. Hsu, Shun-Cheng, Lee, Chong-Yi, Hwang, Jung-Min, Su, Juh-Yuh, Wuu, Dong-Sing, Horng, Ray-Hua. Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.18, no.23, 2472-2474.

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7. Chiu, Ching-Hua, Lo, Ming-Hua, Lu, Tien-Chang, Yu, Peichen, Huang, H. W., Kuo, Hao-Chung, Wang, Shing-Chung. Nano-Processing Techniques Applied in GaN-Based Light-Emitting Devices With Self-Assembly Ni Nano-Masks. Journal of lightwave technology : a joint IEEE/OSA publication, vol.26, no.11, 1445-1454.

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9. IEEE J Sel Topic Quantum Electron Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses ee 2009 10.1109/JSTQE.2009.2015580 15 1218 

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10. Ee, Yik-Khoon, Kumnorkaew, Pisist, Arif, Ronald A., Tong, Hua, Gilchrist, James F., Tansu, Nelson. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics express, vol.17, no.16, 13747-.

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11. Zhu, Peifen, Liu, Guangyu, Zhang, Jing, Tansu, Nelson. FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays. Journal of display technology, vol.9, no.5, 317-323.

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12. Wu, L.W., Chang, S.J., Wen, T.C., Su, Y.K., Chen, J.F., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K.. Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes. IEEE journal of quantum electronics, vol.38, no.5, 446-450.

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13. Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Sheu, J.K., Wen, T.C., Lai, W.C., Chen, J.R., Tsai, J.M.. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes. IEEE journal on selected topics in quantum electronics : a publication of the IEEE Communications Society, vol.8, no.4, 744-748.

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14. Chung-Hsun Jang, Jinn-Kong Sheu, Tsai, C.M., Shoou-Jinn Chang, Wei-Chih Lai, Ming-Lun Lee, Ko, T.K., Shen, C.F., Shei, S.C.. Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer. IEEE journal of quantum electronics, vol.46, no.4, 513-517.

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15. Lee, Y.J., Hwang, J.M., Hsu, T.C., Hsieh, M.H., Jou, M.J., Lee, B.J., Lu, T.C., Kuo, H.C., Wang, S.C.. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.18, no.10, 1152-1154.

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17. Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lin, Y.C., Shei, S.C., Lo, H.M., Lin, H.Y., Ke, J.C.. Highly reliable nitride-based LEDs with SPS+ITO upper contacts. IEEE journal of quantum electronics, vol.39, no.11, 1439-1443.

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18. Chang, S.J., Wu, L.W., Su, Y.K., Hsu, Y.P., Lai, W.C., Tsai, J.M., Sheu, J.K., Lee, C.T.. Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.16, no.6, 1447-1449.

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19. Feezell, D. F., Speck, J. S., DenBaars, S. P., Nakamura, S.. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting. Journal of display technology, vol.9, no.4, 190-198.

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20. David, Aurelien. Surface-Roughened Light-Emitting Diodes: An Accurate Model. Journal of display technology, vol.9, no.5, 301-316.

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21. Chang, S.J., Lai, W.C., Su, Y.K., Chen, J.F., Liu, C.H., Liaw, U.H.. InGaN-GaN multiquantum-well blue and green light-emitting diodes. IEEE journal on selected topics in quantum electronics : a publication of the IEEE Communications Society, vol.8, no.2, 278-283.

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23. Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, Nagahama, Shin-ichi. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. Applied physics letters, vol.67, no.13, 1868-1870.

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24. Xiao-Hang Li, Peifen Zhu, Guangyu Liu, Jing Zhang, Renbo Song, Yik-Khoon Ee, Kumnorkaew, P., Gilchrist, J. F., Tansu, N.. Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed ${\hbox{TiO}}_{2}$ Microsphere Arrays. Journal of display technology, vol.9, no.5, 324-332.

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25. Wierer Jr, Jonathan J., David, Aurelien, Megens, Mischa M.. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nature photonics, vol.3, no.3, 163-169.

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26. Jewell, Jason, Simeonov, Dobri, Huang, Shih-Chieh, Hu, Yan-Ling, Nakamura, Shuji, Speck, James, Weisbuch, Claude. Double embedded photonic crystals for extraction of guided light in light-emitting diodes. Applied physics letters, vol.100, no.17, 171105-.

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27. Tsai, C.M., Sheu, J.K., Lai, W.C., Hsu, Y.P., Wang, P.T., Kuo, C.T., Kuo, C.W., Chang, S.J., Su, Y.K.. Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.26, no.7, 464-466.

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28. Liu, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Wu, L.W., Lin, C.C.. Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface. Materials science & engineering B, Solid-state materials for advanced technology, vol.112, no.1, 10-13.

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29. Chang, S.J., Chen, C.H., Chang, P.C., Su, Y.K., Chen, P.C., Jhou, Y.D., Hung, H., Wang, S.M., Luang, B.R.. Nitride-based LEDs with p-InGaN capping layer. IEEE transactions on electron devices, vol.50, no.12, 2567-2570.

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30. Hsu, Y.P., Chang, S.J., Su, Y.K., Chen, S.C., Tsai, J.M., Lai, W.C., Kuo, C.H., Chang, C.S.. InGaN-GaN MQW LEDs with Si treatment. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.17, no.8, 1620-1622.

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