참고문헌 (13)

1. Sentaurus TCAD User Manual 2013 

2. Sano, Nobuyuki, Matsuzawa, Kazuya, Mukai, Mikio, Nakayama, Noriaki. On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants. Microelectronics reliability, vol.42, no.2, 189-199.

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3. Hyohyun Nam, Changhwan Shin. Study of High- $k$/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.34, no.12, 1560-1562.

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4. 10.1007/978-3-642-15868-1 

   

5. Leung, G., Chi On Chui. Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.11, 1489-1491.

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6. Colinge, Jean-Pierre, Lee, Chi-Woo, Ferain, Isabelle, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran, Nazarov, Alexei N., Doria, Rodrigo T.. Reduced electric field in junctionless transistors. Applied physics letters, vol.96, no.7, 073510-.

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7. 10.1109/ICCAD.2008.4681585 

   

8. Leung, G., Chi On Chui. Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.33, no.6, 767-769.

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9. Rios, R., Cappellani, A., Armstrong, M., Budrevich, A., Gomez, H., Pai, R., Rahhal-orabi, N., Kuhn, K.. Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.9, 1170-1172.

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10. Brown, Andrew R, Idris, Niza M, Watling, Jeremy R, Asenov, Asen. Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.11, 1199-1201.

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11. Lee, Chi-Woo, Nazarov, Alexei N., Ferain, Isabelle, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran, Doria, Rodrigo T., Colinge, Jean-Pierre. Low subthreshold slope in junctionless multigate transistors. Applied physics letters, vol.96, no.10, 102106-.

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12. Colinge, Jean-Pierre, Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Razavi, Pedram, O'Neill, Brendan, Blake, Alan, White, Mary, Kelleher, Anne-Marie, McCarthy, Brendan, Murphy, Richard. Nanowire transistors without junctions. Nature nanotechnology, vol.5, no.3, 225-229.

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13. Park, C.H., Ko, M.D., Kim, K.H., Baek, R.H., Sohn, C.W., Baek, C.K., Park, S., Deen, M.J., Jeong, Y.H., Lee, J.S.. Electrical characteristics of 20-nm junctionless Si nanowire transistors. Solid-state electronics, vol.73, 7-10.

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