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Microelectronics reliability, v.55 no.1, 2015년, pp.31 - 37
Chien, Nguyen Dang (Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan) , Shih, Chun-Hsing (Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan)
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Abstract For serving as ideal switching devices in future energy-efficient applications, scaling down the channel lengths of tunnel-field effect transistors (TFETs) is essential to follow the pace of Si-based CMOS technologies. This work elucidates the short-channel mechanisms and the role of the d...
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