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NTIS 바로가기Scientific reports, v.4, 2014년, pp.7354 -
Jo, Yongcheol (Division of Physics and Semiconductor Science, Dongguk University , Seoul 100–) , Jung, Kyooho (715, Korea) , Kim, Jongmin (Division of Physics and Semiconductor Science, Dongguk University , Seoul 100–) , Woo, Hyeonseok (715, Korea) , Han, Jaeseok (Division of Physics and Semiconductor Science, Dongguk University , Seoul 100–) , Kim, Hyungsang (715, Korea) , Hong, Jinpyo (Division of Physics and Semiconductor Science, Dongguk University , Seoul 100–) , Lee, Jeon-Kook (715, Korea) , Im, Hyunsik (Division of Physics and Semiconductor Science, Dongguk University , Seoul 100–)
This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I–V) charact...
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