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Microelectronics reliability, v.55 no.9/10, 2015년, pp.1464 - 1470
Eriguchi, K. , Ono, K.
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Plasma process-Induced Damage (PID) is one of the critical issues in designing Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), because PID is believed to enhance reliability degradation and the variability. This paper presents how PID impacts on the variability and reliability characte...
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