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NTIS 바로가기Semiconductor science and technology, v.30 no.6, 2015년, pp.065013 -
Veksler, D , Bersuker, G , Madan, H , Morassi, L , Verzellesi, G
Extracted interface trap densities (Dit) in the oxide/III–V gate stacks vary strongly with the utilized measurement procedures and values of device parameters used in the extraction analysis. Such Dit dependency on both selected procedures and parameters compromises unambiguous extraction of e...
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