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Journal of crystal growth, v.436, 2016년, pp.150 - 154
Kaneko, Kentaro (Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Kyoto 615-8520, Japan) , Suzuki, Kenta (Department of Electronic Science and Engineering, Kyoto University, Katsura, Kyoto 615-8510, Japan) , Ito, Yoshito (Department of Electronic Science and Engineering, Kyoto University, Katsura, Kyoto 615-8510, Japan) , Fujita, Shizuo (Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Kyoto 615-8520, Japan)
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Abstract We report improved growth conditions for corundum-structured α-(Al x Ga1−x )2O3, followed by the growth characteristics of α-(Al x Ga1−x )2O3/Ga2O3 heterostructures with the use of mist chemical vapor deposition (CVD) technology. Higher growth temperatures, 700&ndas...
Jpn. J. Appl. Phys. Fujita 54 030101 2015 10.7567/JJAP.54.030101
Jpn. J. Appl. Phys. Oshima 48 011605 2009 10.1143/JJAP.48.011605
Appl. Phys. Express Sasaki 5 035502 2012 10.1143/APEX.5.035502
IEEE Electron Device Lett. Sasaki 34 493 2013 10.1109/LED.2013.2244057
Appl. Phys. Lett. Higashiwaki 100 013504 2012 10.1063/1.3674287
Appl. Phys. Lett. Higashiwaki 103 123511 2013 10.1063/1.4821858
J. Am. Chem. Soc. Roy 74 719 1952 10.1021/ja01123a039
Phys. Rev. Tippins 140 A316 1965 10.1103/PhysRev.140.A316
Appl. Phys. Lett. Ueda 70 3561 1997 10.1063/1.119233
J. Cryst. Growth Villora 270 420 2004 10.1016/j.jcrysgro.2004.06.027
Phys. Status Solidi C Suzuki 4 2310 2007 10.1002/pssc.200674884
Appl. Phys. Lett. Villora 92 202120 2008 10.1063/1.2919728
Jpn. J. Appl. Phys. Aida 47 8506 2008 10.1143/JJAP.47.8506
J. Cryst. Growth Tomm 220 510 2000 10.1016/S0022-0248(00)00851-4
Cryst. Res. Technol. Galazka 45 1229 2010 10.1002/crat.201000341
Appl. Phys. Express Oshima 1 011202 2008 10.1143/APEX.1.011202
Jpn. J. Appl. Phys. Oshima 52 051101 2013 10.7567/JJAP.52.051101
Appl. Phys. Express Sasaki 6 086502 2013 10.7567/APEX.6.086502
Jpn. J. Appl. Phys. Shinohara 47 7311 2008 10.1143/JJAP.47.7311
M. Oda, A. Takatsuka, T. Hitora, J. Kikawa, K. Kaneko, S. Fujita, Presented at The 46th Int. Conf. Solid State Devices and Materials, Tsukuba, Japan, #N-1-5, 2014.
Appl. Phys. Express Oshima 8 055501 2015 10.7567/APEX.8.055501
J. Am. Ceram. Soc. French 13 471 1990
Jpn. J. Appl. Phys. Oshima 48 070202 2009 10.1143/JJAP.48.070202
Jpn. J. Appl. Phys. Kawaharamura 53 05FF08 2014 10.7567/JJAP.53.05FF08
J. Cryst. Growth Nishinaka 310 5007 2008 10.1016/j.jcrysgro.2008.07.007
Appl. Phys. Express Kaneko 2 075501 2009 10.1143/APEX.2.075501
Jpn. J. Appl. Phys. Nishinaka 48 121103 2009 10.1143/JJAP.48.121103
Phys. Status Solidi B Nishinaka 247 1460 2010 10.1002/pssb.200983247
Jpn. J. Appl. Phys. Lee 54 030301 2015 10.7567/JJAP.54.030301
J. Cryst. Growth Fujita 95 224 1989 10.1016/0022-0248(89)90388-6
Jpn. J. Appl. Phys. Kaneko 51 020201 2012 10.7567/JJAP.51.11PJ03
Jpn. J. Appl. Phys. Ito 51 100207 2012 10.7567/JJAP.51.09LD16
Appl. Phys. Lett. People 47 322 1985 10.1063/1.96206
Appl. Phys. Lett. Kamimura 104 192104 2014 10.1063/1.4876920
M. Hattori, R. Wakabayashi, T. Oshima, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Horiba, H. Kumigashira, K. Yoshimatsu, A. Ohtomo, Presented at The 62nd JSAP (Japan Society of Applied Physics) Spring Meeting, Hiratsuka, Japan, #13p-D1-D8, 2015 (in Japanese).
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