참고문헌 (33)

1. Higashiwaki, Masataka, Sasaki, Kohei, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu. Recent progress in Ga₂O₃ power devices. Semiconductor science and technology, vol.31, no.3, 034001-.

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2. Lu Huang, Qian Feng, Genquan Han, Fuguo Li, Xiang Li, Liwei Fang, Xiangyu Xing, Jincheng Zhang, Yue Hao. Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures. IEEE photonics journal, vol.9, no.4, 1-8.

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3. Mastro, Michael A., Kuramata, Akito, Calkins, Jacob, Kim, Jihyun, Ren, Fan, Pearton, S. J.. Perspective—Opportunities and Future Directions for Ga₂O₃. ECS journal of solid state science and technology : jss, vol.6, no.5, P356-P359.

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5. Víllora Encarnación Garcia Arjoca Stelian Shimamura Kiyoshi Inomata Daisuke Aoki Kazuo , in Proc.SPIE, vol. 8987 (2014). 

6. Orita, Masahiro, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo. Deep-ultraviolet transparent conductive β-Ga2O3 thin films. Applied physics letters, vol.77, no.25, 4166-4168.

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7. Roy, Rustum, Hill, V. G., Osborn, E. F.. Polymorphism of Ga₂O₃ and the System Ga₂O₃-H₂O. Journal of the American Chemical Society, vol.74, no.3, 719-722.

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8. Mezzadri, Francesco, Calestani, Gianluca, Boschi, Francesco, Delmonte, Davide, Bosi, Matteo, Fornari, Roberto. Crystal Structure and Ferroelectric Properties of ε-Ga₂O₃ Films Grown on (0001)-Sapphire. Inorganic chemistry, vol.55, no.22, 12079-12084.

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9. Shinohara, Daisuke, Fujita, Shizuo. Heteroepitaxy of Corundum-Structured α-Ga₂O₃ Thin Films on α-Al₂O₃ Substrates by Ultrasonic Mist Chemical Vapor Deposition. Japanese journal of applied physics, vol.47, no.r9, 7311-.

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10. Chen, Yuanpeng, Xia, Xiaochuan, Liang, Hongwei, Abbas, Qasim, Liu, Yang, Du, Guotong. Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga₂O₃ Films on Al₂O₃ via Metal–Organic Chemical Vapor Deposition. Crystal growth & design, vol.18, no.2, 1147-1154.

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11. Wakabayashi, Ryo, Yoshimatsu, Kohei, Hattori, Mai, Ohtomo, Akira. Epitaxial structure and electronic property of β-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition. Applied physics letters, vol.111, no.16, 162101-.

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12. Yu, Z., Overgaard, C. D., Droopad, R., Passlack, M., Abrokwah, J. K.. Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy. Applied physics letters, vol.82, no.18, 2978-2980.

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13. Kaneko, Kentaro, Suzuki, Kenta, Ito, Yoshito, Fujita, Shizuo. Growth characteristics of corundum-structured α-(Al _x Ga_1−x )₂O₃/Ga₂O₃ heterostructures on sapphire substrates. Journal of crystal growth, vol.436, 150-154.

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14. Fujita, Shizuo, Oda, Masaya, Kaneko, Kentaro, Hitora, Toshimi. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices. Japanese journal of applied physics, vol.55, no.12, 1202A3-.

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15. Marie, P., Portier, X., Cardin, J.. Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering. Physica status solidi. PSS. A, Applications and materials science, vol.205, no.8, 1943-1946.

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16. Orita, Masahiro, Hiramatsu, Hidenori, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo. Preparation of highly conductive, deep ultraviolet transparent β-Ga₂O₃ thin film at low deposition temperatures. Thin solid films, vol.411, no.1, 134-139.

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17. Oshima, Takayoshi, Okuno, Takeya, Fujita, Shizuo. (Regular Papers & Brief Communications) (Semiconductors) $Ga_2O_3$ Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.46, no.11, 7217-7220.

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20. Kawaharamura, Toshiyuki. Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow. Japanese journal of applied physics, vol.53, no.5, 05FF08-.

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21. Dang, Giang T., Kawaharamura, Toshiyuki, Furuta, Mamoru, Allen, Martin W.. Mist-CVD Grown Sn-Doped $\alpha $-Ga₂O₃ MESFETs. IEEE transactions on electron devices, vol.62, no.11, 3640-3644.

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22. Fujita, S., Kaneko, K.. Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films. Journal of crystal growth, vol.401, 588-592.

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23. Oshima, T., Nakazono, T., Mukai, A., Ohtomo, A.. Epitaxial growth of γ-Ga₂O₃ films by mist chemical vapor deposition. Journal of crystal growth, vol.359, 60-63.

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24. Tamba, Daiki, Kubo, Osamu, Oda, Masaya, Osaka, Shun, Takahashi, Kazuki, Tabata, Hiroshi, Kaneko, Kentaro, Fujita, Shizuo, Katayama, Mitsuhiro. Surface termination structure of α-Ga2O3 film grown by mist chemical vapor deposition. Applied physics letters, vol.108, no.25, 251602-.

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25. Murakami, Hisashi, Nomura, Kazushiro, Goto, Ken, Sasaki, Kohei, Kawara, Katsuaki, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu, Monemar, Bo, Koukitu, Akinori. Homoepitaxial growth of β-Ga₂O₃layers by halide vapor phase epitaxy. Applied physics express, vol.8, no.1, 015503-.

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26. Kamada, Yudai, Kawaharamura, Toshiyuki, Nishinaka, Hiroyuki, Fujita, Shizuo. Linear-Source Ultrasonic Spray Chemical Vapor Deposition Method for Fabrication of ZnMgO Films and Ultraviolet Photodetectors. Japanese journal of applied physics. Part 2, Letters, vol.45, no.7, L857-.

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27. Giacomo, P. Equation for the Determination of the Density of Moist Air (1981). Metrologia, vol.18, no.1, 33-40.

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28. Davis, R S. Equation for the Determination of the Density of Moist Air (1981/91). Metrologia, vol.29, no.1, 67-70.

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29. Picard, A, Davis, R S, Gläser, M, Fujii, K. Revised formula for the density of moist air (CIPM-2007). Metrologia, vol.45, no.2, 149-155.

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30. 10.1175/1520-0450(1981)020@@ @@2.0.CO;2 

    

31. Tsilingiris, P.T.. Thermophysical and transport properties of humid air at temperature range between 0 and 100^oC. Energy conversion and management, vol.49, no.5, 1098-1110.

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32. Melling, Adrian, Noppenberger, Stefan, Still, Martin, Venzke, Holger. Interpolation Correlations for Fluid Properties of Humid Air in the Temperature Range 100 °C to 200 °C. Journal of physical and chemical reference data, vol.26, no.4, 1111-1123.

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33. Marezio, M., Remeika, J. P.. Bond Lengths in the α-Ga2O3 Structure and the High-Pressure Phase of Ga2−xFexO3. The Journal of chemical physics, vol.46, no.5, 1862-1865.

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