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NTIS 바로가기Journal of alloys and compounds, v.663, 2016년, pp.651 - 658
Jang, Y. , Kim, J.B. , Hong, T.E. , Yeo, S.J. , Lee, S. , Jung, E.A. , Park, B.K. , Chung, T.M. , Kim, C.G. , Lee, D.J. , Lee, H.B.R. , Kim, S.H.
Molybdenum nitride (Mo2N) thin films were grown by atomic layer deposition (ALD) using a sequential supply of a newly synthesized Mo metalorgranic precursor, Mo((NBu)-Bu-t)(2)((SBu)-Bu-t)(2), and H-2 plasma at a substrate temperature of 300 degrees C. A newly proposed ALD system exhibited typical AL...
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