[논문]Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

Jang, Yujin; Yeo, Seungmin; Lee, Han-Bo-Ram; Kim, Hyungjun; Kim, Soo-Hyun

doi:10.1016/j.apsusc.2016.01.038

[해외논문] Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

Applied surface science, v.365, 2016년, pp.160 - 165

Jang, Yujin (School of Materials Science and Engineering, Yeungnam University, Gyeongsangbuk-do 712-749, Republic of Korea) , Yeo, Seungmin (School of Electrical Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea) , Lee, Han-Bo-Ram (Department of Materials Science and Engineering, Incheon National University, 119 Academi-ro, Yeonsu-gu, Incheon 406-772, Republic of Korea) , Kim, Hyungjun (School of Electrical Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea) , Kim, Soo-Hyun (School of Materials Science and Engineering, Yeungnam University, Gyeongsangbuk-do 712-749, Republic of Korea)

Abstract ▼ AI-Helper

Abstract Molybdenum disulfide (MoS2) thin films were grown directly on SiO2 covered wafers by atomic layer deposition (ALD) at the deposition temperatures ranging from 175 to 225°C using molybdenum hexacarbonyl [Mo(CO)6] and H2S plasma as the precursor and reactant, respectively. Self-limited film growth on the thermally-grown SiO2 substrate was observed with both the precursor and reactant pulsing time. The growth rate was ∼0.05nm/cycle and a short incubation cycle of around 13 was observed at a deposition temperature of 175°C. The MoS2 films formed nanocrystalline microstructure with a hexagonal crystal system (2H-MoS2), which was confirmed by X-ray diffraction and transmission electron microscopy. Single crystal MoS2 nanosheets, ∼20nm in size, were fabricated by controlling the number of ALD cycles. The ALD-MoS2 thin films exhibited good stoichiometry with negligible C impurities, approximately 0.1at.% from Rutherford backscattering spectrometry (RBS). X-ray photoelectron spectroscopy confirmed the formation of chemical bonding from MoS2. The step coverage of ALD-MoS2 was approximately 75% at a 100nm sized trench. Overall, the ALD-MoS2 process made uniform deposition possible on the wafer-scale (4in. in diameter). Highlights The formation of pure and stoichiometric MoS2 thin film by atomic layer deposition (ALD). ALD of MoS2 using Mo(CO)6 and H2S plasma. Large-area (4in. in diameter) and direct growth of MoS2 thin films and nanosheets by ALD. Remarkable step coverage at 100nm trench.

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참고문헌 (38)

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[해외논문] Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

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[해외논문] Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

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