참고문헌 (34)

1. García, I., Kearns-McCoy, C. F., Ward, J. S., Steiner, M. A., Geisz, J. F., Kurtz, S. R.. Back reflectors based on buried Al2O3 for enhancement of photon recycling in monolithic, on-substrate III-V solar cells. Applied physics letters, vol.105, no.13, 133507-.

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2. Proc 38th IEEE Photovoltaic Spec Conf Design of semiconductor-based back reflectors for high Voc monolithic multijunction solar cells garcia 0 2042 

3. Yang, L., Bulsara, M.T., Lee, K.E., Fitzgerald, E.A.. Compositionally-graded InGaAs-InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs. Journal of crystal growth, vol.324, no.1, 103-109.

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4. France, Ryan M., Garcia, Ivan, McMahon, William E., Norman, Andrew G., Simon, John, Geisz, John F., Friedman, Daniel J., Romero, Manuel J.. Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers. IEEE journal of photovoltaics, vol.4, no.1, 190-195.

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5. 0 

6. McMahon, William E., Kang, Joongoo, France, Ryan M., Norman, Andrew G., Friedman, Daniel J., Wei, Su-Huai. Ordering-enhanced dislocation glide in III-V alloys. Journal of applied physics, vol.114, no.20, 203506-.

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7. France, R. M., McMahon, W. E., Norman, A. G., Geisz, J. F., Romero, M. J.. Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP. Journal of applied physics, vol.112, no.2, 023520-.

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8. Geisz, J. F., Steiner, M. A., García, I., Kurtz, S. R., Friedman, D. J.. Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells. Applied physics letters, vol.103, no.4, 041118-.

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9. Geisz, John F., Steiner, Myles A., Garcia, Ivan, France, Ryan M., McMahon, William E., Osterwald, Carl R., Friedman, Daniel J.. Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells. IEEE journal of photovoltaics, vol.5, no.6, 1827-1839.

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10. Ahrenkiel, S.P., Wanlass, M.W., Carapella, J.J., Ahrenkiel, R.K., Johnston, S.W., Gedvilas, L.M.. Optimization of buffer layers for lattice-mismatched epitaxy of Ga_xIn_1-xAs/InAs_yP_1-y double-heterostructures on InP. Solar energy materials and solar cells : an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, vol.91, no.10, 908-918.

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11. Tersoff, J.. Dislocations and strain relief in compositionally graded layers. Applied physics letters, vol.62, no.7, 693-695.

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12. Proc Int Conf Concentrator Photovoltaic Syst Component integration strategies in metamorphic 4-junction III-V concentrator solar cells garcía 0 1616 41 

13. Quitoriano, Nathaniel J., Fitzgerald, Eugene A.. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation. Journal of applied physics, vol.102, no.3, 033511-.

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14. France, R. M., Geisz, J. F., Steiner, M. A., To, B., Romero, M. J., Olavarria, W. J., King, R. R.. Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells. Journal of applied physics, vol.111, no.10, 103528-.

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15. McDevitt, T. L., Mahajan, S., Laughlin, D. E., Bonner, W. A., Keramidas, V. G.. Two-dimensional phase separation inIn1−xGaxAsyP1−yepitaxial layers. Physical review. B, Condensed matter, vol.45, no.12, 6614-6622.

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16. France, Ryan M., Geisz, John F., Garcia, Ivan, Steiner, Myles A., McMahon, William E., Friedman, Daniel J., Moriarty, Tom E., Osterwald, Carl, Ward, J. Scott, Duda, Anna, Young, Michelle, Olavarria, Waldo J.. Quadruple-Junction Inverted Metamorphic Concentrator Devices. IEEE journal of photovoltaics, vol.5, no.1, 432-437.

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17. Andre, C. L., Boeckl, J. J., Wilt, D. M., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., Keyes, B. M., Ringel, S. A.. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates. Applied physics letters, vol.84, no.18, 3447-3449.

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18. Miller, Owen D., Yablonovitch, Eli, Kurtz, Sarah R.. Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit. IEEE journal of photovoltaics, vol.2, no.3, 303-311.

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19. Yamaguchi, Masafumi, Amano, Chikara. Efficiency calculations of thin-film GaAs solar cells on Si substrates. Journal of applied physics, vol.58, no.9, 3601-3606.

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20. France, Ryan M., Garcia, Ivan, McMahon, William E., Norman, Andrew G., Simon, John, Geisz, John F., Friedman, Daniel J., Romero, Manuel J.. Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers. IEEE journal of photovoltaics, vol.4, no.1, 190-195.

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21. Steiner, M. A., Geisz, J. F., García, I., Friedman, D. J., Duda, A., Kurtz, S. R.. Optical enhancement of the open-circuit voltage in high quality GaAs solar cells. Journal of applied physics, vol.113, no.12, 123109-.

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22. Fetzer, C.M., Yoon, H., King, R.R., Law, D.C., Isshiki, T.D., Karam, N.H.. 1.6/1.1eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge. Journal of crystal growth, vol.276, no.1, 48-56.

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23. Tomasulo, S., Nay Yaung, K., Faucher, J., Vaisman, M., Lee, M. L.. Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates. Applied physics letters, vol.104, no.17, 173903-.

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24. Garcia, I., France, R.M., Geisz, J.F., Simon, J.. Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications. Journal of crystal growth, vol.393, 64-69.

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25. Fitzgerald, E.A.. Dislocations in strained-layer epitaxy: theory, experiment, and applications. Materials science reports, vol.7, no.3, 87-140.

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26. Design flexibility of ultra-high efficiency four-junction inverted metamorphic solar cells france 0 

27. Dimroth, Frank, Grave, Matthias, Beutel, Paul, Fiedeler, Ulrich, Karcher, Christian, Tibbits, Thomas N. D., Oliva, Eduard, Siefer, Gerald, Schachtner, Michael, Wekkeli, Alexander, Bett, Andreas W., Krause, Rainer, Piccin, Matteo, Blanc, Nicolas, Drazek, Charlotte, Guiot, Eric, Ghyselen, Bruno, Salvetat, Thierry, Tauzin, Aurélie, Signamarcheix, Thomas, Dobrich, Anja, Hannappel, Thomas, Schwarzburg, Klaus. Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency. Progress in photovoltaics, vol.22, no.3, 277-282.

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28. Wang, C. A.. Correlation between surface step structure and phase separation in epitaxial GaInAsSb. Applied physics letters, vol.76, no.15, 2077-2079.

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29. Johnston, Steve, Zaunbrecher, Katherine, Ahrenkiel, Richard, Kuciauskas, Darius, Albin, David, Metzger, Wyatt. Simultaneous Measurement of Minority-Carrier Lifetime in Single-Crystal CdTe Using Three Transient Decay Techniques. IEEE journal of photovoltaics, vol.4, no.5, 1295-1300.

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30. Spontaneous Ordering in Semiconductor Alloys mascarenhas 2012 

31. Ahrenkiel, R. K., Ellingson, R., Johnston, S., Wanlass, M.. Recombination lifetime of In0.53Ga0.47As as a function of doping density. Applied physics letters, vol.72, no.26, 3470-3472.

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32. Steiner, Myles A., Geisz, John F., Garcia, Ivan, Friedman, Daniel J., Duda, Anna, Olavarria, Waldo J., Young, Michelle, Kuciauskas, Darius, Kurtz, Sarah R.. Effects of Internal Luminescence and Internal Optics on $V_{\bf oc}$ and $J_{\bf sc}$ of III--V Solar Cells. IEEE journal of photovoltaics, vol.3, no.4, 1437-1442.

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33. 10.1109/PVSC.2005.1488196 

    

34. King, R. R., Bhusari, D., Boca, A., Larrabee, D., Liu, X.‐Q., Hong, W., Fetzer, C. M., Law, D. C., Karam, N. H.. Band gap‐voltage offset and energy production in next‐generation multijunction solar cells. Progress in photovoltaics, vol.19, no.7, 797-812.

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