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NTIS 바로가기Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd, 2016 June, 2016년, pp.3421 - 3424
Bittner, Zachary S. (NanoPower Research Laboratory, Rochester Institute of Technology, New York, United States) , Slocum, Michael A. (NanoPower Research Laboratory, Rochester Institute of Technology, New York, United States) , Nelson, George T. (NanoPower Research Laboratory, Rochester Institute of Technology, New York, United States) , Tatavarti, Rao (MicroLink Devices, Niles, Illinois, United States) , Hubbard, Seth M. (NanoPower Research Laboratory, Rochester Institute of Technology, New York, United States)
InAs/GaAs quantum dots (QDs) have been investigated as a potential method of engineering the bandgap of the middle junction in triple junction solar cells to better match current generation and radiation tolerance to that of the InGaP top cell. While it is possible to successfully include QDs withou...
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