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Applied surface science, v.369, 2016년, pp.377 - 383
Zimmermann, C. (Corresponding author.) , Bethge, O. , Winkler, K. , Lutzer, B. , Bertagnolli, E.
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Abstract Metal Oxide Semiconductor capacitors are investigated, employing ALD grown Y2O3 as gate dielectric, and n-type (100) germanium as channel substrate. The effect of post deposition annealing (PDA) in oxygen and forming gas atmosphere using a thin catalytically acting platinum (Pt)-layer on t...
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