다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Proceedings of the IEEE, v.100 no.6, 2012년, pp.1951 - 1970
Wong, H.-S. Philip (University of Stanford, Department of Electrical Engineering, Stanford, CA, USA) , Lee, Heng-Yuan (Industrial Technology and Research Institute, Nanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Hsinchu, Taiwan) , Yu, Shimeng (University of Stanford, Department of Electrical Engineering, Stanford, CA, USA) , Chen, Yu-Sheng (National Tsing Hua University, Institute of Electronics Engineering, Hsinchu, Taiwan) , Wu, Yi (University of Stanford, Department of Electrical Engineering, Stanford, CA, USA) , Chen, Pang-Shiu (Minghsin University of Science and Technology, Department of Chemical and Materials Engineering, Hsinchu, Taiwan) , Lee, Byoungil (University of Stanford, Department of Electrical Engineering, Stanford, CA, USA) , Chen, Frederick T. (Industrial Technology and Research Institute, Nanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Hsinchu,) , Tsai, Ming-Jinn
AI-Helper
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory ...
Walczyk, Ch., Wenger, Ch., Sohal, R., Lukosius, M., Fox, A., Dąbrowski, J., Wolansky, D., Tillack, B., Müssig, H.-J., Schroeder, T.. Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications. Journal of applied physics, vol.105, no.11, 114103-.
Inoue, I. H., Yasuda, S., Akinaga, H., Takagi, H.. Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution. Physical review. B, Condensed matter and materials physics, vol.77, no.3, 035105-.
Lee, Dongsoo, Seong, Dong-jun, Jo, Inhwa, Xiang, F., Dong, R., Oh, Seokjoon, Hwang, Hyunsang. Resistance switching of copper doped MoOx films for nonvolatile memory applications. Applied physics letters, vol.90, no.12, 122104-.
Szot, Krzysztof, Speier, Wolfgang, Bihlmayer, Gustav, Waser, Rainer. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nature materials, vol.5, no.4, 312-320.
Son, J. Y., Shin, Y.-H.. Direct observation of conducting filaments on resistive switching of NiO thin films. Applied physics letters, vol.92, no.22, 222106-.
Park, Gyeong-Su, Li, Xiang-Shu, Kim, Dong-Chirl, Jung, Ran-Ju, Lee, Myoung-Jae, Seo, Sunae. Observation of electric-field induced Ni filament channels in polycrystalline NiOx film. Applied physics letters, vol.91, no.22, 222103-.
10.1109/IEDM.2008.4796677
Kwon, Deok-Hwang, Kim, Kyung Min, Jang, Jae Hyuck, Jeon, Jong Myeong, Lee, Min Hwan, Kim, Gun Hwan, Li, Xiang-Shu, Park, Gyeong-Su, Lee, Bora, Han, Seungwu, Kim, Miyoung, Hwang, Cheol Seong. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature nanotechnology, vol.5, no.2, 148-153.
10.1109/IEDM.2010.5703394
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., Tiedke, S.. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition. Journal of applied physics, vol.98, no.3, 033715-.
Buh, Gyoung-Ho, Hwang, Inrok, Park, Bae Ho. Time-dependent electroforming in NiO resistive switching devices. Applied physics letters, vol.95, no.14, 142101-.
Xu, Nuo, Liu, Lifeng, Sun, Xiao, Liu, Xiaoyan, Han, Dedong, Wang, Yi, Han, Ruqi, Kang, Jinfeng, Yu, Bin. Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories. Applied physics letters, vol.92, no.23, 232112-.
Janousch, M., Meijer, G. I., Staub, U., Delley, B., Karg, S. F., Andreasson, B. P.. Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory. Advanced materials, vol.19, no.17, 2232-2235.
10.1109/IEDM.2008.4796676
IEEE Electron Device Lett HfO $_x$ bipolar resistive memory with robust endurance using AlCu as buffer electrode lee 2009 10.1109/LED.2009.2021004 30 703
Appl Phys Lett Resistive switching memory effect of ZrO2 films with Zr+ implanted liu 2008 92
Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafría, M.. Metal oxide resistive memory switching mechanism based on conductive filament properties. Journal of applied physics, vol.110, no.12, 124518-.
Yu, Shimeng, Guan, Ximeng, Wong, H.-S. Philip. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model. Applied physics letters, vol.99, no.6, 063507-.
Yu, Shimeng, Jeyasingh, Rakesh, Wu, Yi, Philip Wong, H.-S.. AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory. Applied physics letters, vol.99, no.23, 232105-.
Proc Symp Very Large Scale Integr Circuits A 5 ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme sheu 2009 82
Yu, Shimeng, Jeyasingh, Rakesh, Wu, Yi, Wong, H.-S. Philip. Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2. Physical review. B, Condensed matter and materials physics, vol.85, no.4, 045324-.
Sato, Yoshihiro, Tsunoda, Koji, Aoki, Masaki, Sugiyama, Yoshihiro. Novel Circuitry Configuration with Paired-Cell Erase Operation for High-Density 90-nm Embedded Resistive Random Access Memory. Japanese journal of applied physics, vol.48, no.4, 04C075-.
Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H., Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo. Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.9, no.4, 1476-1481.
Sato, Yoshihiro, Kinoshita, Kentaro, Aoki, Masaki, Sugiyama, Yoshihiro. Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model. Applied physics letters, vol.90, no.3, 033503-.
10.1109/NANOARCH.2008.4585796
Shimeng Yu, Yi Wu, Jeyasingh, R., Kuzum, D., Wong, H. P.. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation. IEEE transactions on electron devices, vol.58, no.8, 2729-2737.
Proc IEEE Very Large Scale Integr (VLSI) Symp Bi-layered RRAM with unlimited endurance and extremely uniform switching kim 2011 52
10.1109/ISSCC.2012.6177067
ACS Nano Short-term memory to long-term memory transition in a nanoscale memristor chang 2011 10.1021/nn202983n 5 7669
Seo, Kyungah, Kim, Insung, Jung, Seungjae, Jo, Minseok, Park, Sangsu, Park, Jubong, Shin, Jungho, Biju, Kuyyadi P, Kong, Jaemin, Lee, Kwanghee, Lee, Byounghun, Hwang, Hyunsang. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. Nanotechnology, vol.22, no.25, 254023-.
10.1109/IEDM.2007.4419060
chen 2010
Seong-Geon Park, Magyari-Köpe, Blanka, Nishi, Y.
Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in
Tanachutiwat, S., Ming Liu, Wei Wang. FPGA Based on Integration of CMOS and RRAM. IEEE transactions on very large scale integration (VLSI) systems, vol.19, no.11, 2023-2032.
Goux, L., Chen, Y.-Y, Pantisano, L., Wang, X.-P., Groeseneken, G., Jurczak, M., Wouters, D. J.. On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems. Electrochemical and solid-state letters, vol.13, no.6, G54-.
Kim, Yong-Mu, Lee, Jang-Sik. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices. Journal of applied physics, vol.104, no.11, 114115-.
IEEE Electron Device Lett Effect of top electrode material on resistive switching properties of ZrO $_2$ film memory devices lin 2007 10.1109/LED.2007.894652 28 366
Xu, N, Liu, L F, Sun, X, Chen, C, Wang, Y, Han, D D, Liu, X Y, Han, R Q, Kang, J F, Yu, B. Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention. Semiconductor science and technology, vol.23, no.7, 075019-.
Yoshida, Chikako, Tsunoda, Kohji, Noshiro, Hideyuki, Sugiyama, Yoshihiro. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application. Applied physics letters, vol.91, no.22, 223510-.
Choi, J. S., Kim, J.-S., Hwang, I. R., Hong, S. H., Jeon, S. H., Kang, S.-O., Park, B. H., Kim, D. C., Lee, M. J., Seo, S.. Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes. Applied physics letters, vol.95, no.2, 022109-.
Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L.. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. IEEE transactions on electron devices, vol.56, no.2, 193-200.
Jeong, Doo Seok, Choi, Byung Joon, Hwang, Cheol Seong. Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view. Journal of applied physics, vol.100, no.11, 113724-.
Wang, W., Fujita, S., Wong, S.S.. Elimination of Forming Process for TiOx Nonvolatile Memory Devices. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.30, no.7, 763-765.
Simmons, J G. Conduction in thin dielectric films. Journal of physics. D, applied physics, vol.4, no.5, 613-657.
Dearnaley, G, Stoneham, A M, Morgan, D V. Electrical phenomena in amorphous oxide films. Reports on progress in physics, vol.33, no.3, 1129-1191.
Beck, A., Bednorz, J. G., Gerber, Ch., Rossel, C., Widmer, D.. Reproducible switching effect in thin oxide films for memory applications. Applied physics letters, vol.77, no.1, 139-141.
Watanabe, Y., Bednorz, J. G., Bietsch, A., Gerber, Ch., Widmer, D., Beck, A., Wind, S. J.. Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals. Applied physics letters, vol.78, no.23, 3738-3740.
Rohde, Christina, Choi, Byung Joon, Jeong, Doo Seok, Choi, Seol, Zhao, Jin-Shi, Hwang, Cheol Seong. Identification of a determining parameter for resistive switching of TiO2 thin films. Applied physics letters, vol.86, no.26, 262907-.
Jameson, John R., Fukuzumi, Yoshiaki, Wang, Zheng, Griffin, Peter, Tsunoda, Koji, Meijer, G. Ingmar, Nishi, Yoshio. Field-programmable rectification in rutile TiO2 crystals. Applied physics letters, vol.91, no.11, 112101-.
Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., Kim, J.-S., Choi, J. S., Park, B. H.. Reproducible resistance switching in polycrystalline NiO films. Applied physics letters, vol.85, no.23, 5655-5657.
10.1109/IEDM.2004.1419228
Yoshida, Chikako, Kinoshita, Kentaro, Yamasaki, Takahiro, Sugiyama, Yoshihiro. Direct observation of oxygen movement during resistance switching in NiO/Pt film. Applied physics letters, vol.93, no.4, 042106-.
10.1109/IEDM.2008.4796751
Jeong, Hu Young, Lee, Jeong Yong, Choi, Sung-Yool. Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films. Applied physics letters, vol.97, no.4, 042109-.
Yang, Min Kyu, Park, Jae-Wan, Ko, Tae Kuk, Lee, Jeon-Kook. Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices. Applied physics letters, vol.95, no.4, 042105-.
Cao, Xun, Li, Xiaomin, Gao, Xiangdong, Yu, Weidong, Liu, Xinjun, Zhang, Yiwen, Chen, Lidong, Cheng, Xinhong. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications. Journal of applied physics, vol.106, no.7, 073723-.
Chang, Wen-Yuan, Ho, Yi-Tang, Hsu, Tzu-Cheng, Chen, Frederick, Tsai, Ming-Jinn, Wu, Tai-Bor. Influence of Crystalline Constituent on Resistive Switching Properties of TiO[sub 2] Memory Films. Electrochemical and solid-state letters, vol.12, no.4, H135-.
10.1109/IEDM.2007.4419062
Goux, L., Lisoni, J.G., Xin Peng Wang, Jurczak, M., Wouters, D.J.. Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells. IEEE transactions on electron devices, vol.56, no.10, 2363-2368.
Yu, Shimeng, Wu, Yi, Wong, H.-S. Philip. Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory. Applied physics letters, vol.98, no.10, 103514-.
10.1109/IEDM.2011.6131539
Tech Dig IEEE Int Electron Devices Meeting Evidence and solution of over-RESET problem for HfOx based resistive memory with sub-ns switching speed and high endurance lee 2010 460
Yoo, I. K., Kang, B. S., Park, Y. D., Lee, M. J., Park, Y.. Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films. Applied physics letters, vol.92, no.20, 202112-.
Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., Altimime, L.. Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells. Applied physics letters, vol.97, no.24, 243509-.
Wilk, G. D., Wallace, R. M., Anthony, J. M.. High-κ gate dielectrics: Current status and materials properties considerations. Journal of applied physics, vol.89, no.10, 5243-5275.
10.1109/ESSDERC.2010.5618200
Tech Dig IEEE Int Electron Devices Meeting A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability chien 2010 440
Chen, Frederick T., Lee, HengYuan, Chen, YuSheng, Hsu, YenYa, Zhang, LiJie, Chen, PangShiu, Chen, WeiSu, Gu, PeiYi, Liu, WenHsing, Wang, SuMin, Tsai, ChenHan, Sheu, ShyhShyuan, Tsai, MingJinn, Huang, Ru. Resistance switching for RRAM applications. Science China. Information sciences, vol.54, no.5, 1073-1086.
Proc Symp Very Large Scale Integr (VLSI) Tech Dig A novel ${\hbox {Cu}}_{x}{\hbox {Si}}_{\rm y}{\hbox {O}}$ resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications wang 2010 89
Proc IEEE Very Large Scale Integr (VLSI) Symp Forming-free nitrogen-doped AlO X RRAM with sub- $\mu$ A programming current kim 2011 22
Liang, Jiale, Wong, H.-S Philip. Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies. IEEE transactions on electron devices, vol.57, no.10, 2531-2538.
Yu, Shimeng, Yin Chen, Yang, Guan, Ximeng, Philip Wong, H.-S., Kittl, Jorge A.. A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory. Applied physics letters, vol.100, no.4, 043507-.
Tech Dig Int Electron Device Meeting 10 $\times$ 10 nm $^2$ Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation govoreanu 2011 729
Wu, Yi, Lee, Byoungil, Wong, H.-S. Philip.
IEEE Electron Device Lett Resistance controllability of Ta $_2$ O $_5$ /TiO $_2$ stack ReRAM for low-voltage and multilevel operation terai 2010 10.1109/LED.2009.2039021 31 204
Proc Int Conf Solid State Devices Mater Multilevel switching characteristics for WOX resistive RAM (RRAM) chien 2008 1170
Wang, Sheng-Yu, Huang, Chin-Wen, Lee, Dai-Ying, Tseng, Tseung-Yuen, Chang, Ting-Chang. Multilevel resistive switching in Ti/CuxO/Pt memory devices. Journal of applied physics, vol.108, no.11, 114110-.
10.1109/IEDM.2009.5424411
Proc Int Conf Solid State Devices Mater High-speed multilevel resistive RAM using RTO WOX chien 2009 1206
Proc Int Symp Very Large Scale Integr (VLSI) Technol Syst Appl Characterization of switching parameters and multilevel capability in HfOx/AlOx Bi-layer RRAM devices yu 2011 106
Kim, Sung In, Lee, Jae Hak, Chang, Young Wook, Hwang, Sung Sic, Yoo, Kyung-Hwa. Reversible resistive switching behaviors in NiO nanowires. Applied physics letters, vol.93, no.3, 033503-.
Yun, Dae Keun, Kim, Ki-Don, Kim, Sungho, Lee, Ji-Hye, Park, Hyeong-Ho, Jeong, Jun-Ho, Choi, Yang-Kyu, Choi, Dae-Geun. Mass fabrication of resistive random access crossbar arrays by step and flash imprint lithography. Nanotechnology, vol.20, no.44, 445305-.
Nagashima, Kazuki, Yanagida, Takeshi, Oka, Keisuke, Taniguchi, Masateru, Kawai, Tomoji, Kim, Jin-Soo, Park, Bae Ho. Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.10, no.4, 1359-1363.
Oka, Keisuke, Yanagida, Takeshi, Nagashima, Kazuki, Tanaka, Hidekazu, Kawai, Tomoji. Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires. Journal of the American Chemical Society, vol.131, no.10, 3434-3435.
Kim, Kyung Min, Choi, Byung Joon, Koo, Bon Wook, Choi, Seol, Jeong, Doo Seok, Hwang, Cheol Seong. Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures. Electrochemical and solid-state letters, vol.9, no.12, G343-.
10.1109/VLSIT.2008.4588578
Appl Phys Lett Role of TaON interface for CuxO resistive switching memory based on a combined model zhou 2009 10.1063/1.3078824 94
Lin, Chih-Yang, Wu, Chen-Yu, Wu, Chung-Yi, Hu, Chenming, Tseng, Tseung-Yuen. Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films. Journal of the Electrochemical Society : JES, vol.154, no.9, G189-.
Shimeng Yu, Wong, H.-S Philip. A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.12, 1455-1457.
Fujimoto, Masayuki, Koyama, Hiroshi, Konagai, Masashi, Hosoi, Yasunari, Ishihara, Kazuya, Ohnishi, Shigeo, Awaya, Nobuyoshi. Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching. Applied physics letters, vol.89, no.22, 223509-.
Sungho Kim, Hanul Moon, Gupta, D., Seunghyup Yoo, Yang-Kyu Choi. Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications. IEEE transactions on electron devices, vol.56, no.4, 696-699.
Lee, Hyung Dong, Magyari-Köpe, Blanka, Nishi, Yoshio. Model of metallic filament formation and rupture in NiO for unipolar switching. Physical review. B, Condensed matter and materials physics, vol.81, no.19, 193202-.
Lv, H.B., Yin, M., Fu, X.F., Song, Y.L., Tang, L., Zhou, P., Zhao, C.H., Tang, T.A., Chen, B.A., Lin, Y.Y..
Resistive Memory Switching of
Strukov, Dmitri B., Snider, Gregory S., Stewart, Duncan R., Williams, R. Stanley. The missing memristor found. Nature, vol.453, no.7191, 80-83.
IEEE Electron Device Lett Resistive switching in CeOx films for nonvolatile memory application sun 2009 10.1109/LED.2009.2014256 30 334
Yang, J. Joshua, Pickett, Matthew D., Li, Xuema, Ohlberg, Douglas A. A., Stewart, Duncan R., Williams, R. Stanley. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature nanotechnology, vol.3, no.7, 429-433.
Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., Park, B. H.. Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory. Advanced materials, vol.20, no.5, 924-928.
Functional Metal Oxide Nanostructures yu 2011
wu 2011
10.1109/IEDM.2005.1609461
Gibbons, J.F., Beadle, W.E.. Switching properties of thin Nio films. Solid-state electronics, vol.7, no.11, 785-790.
Appl Phys Lett Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory chen 2008 92
Hickmott, T. W.. Low-Frequency Negative Resistance in Thin Anodic Oxide Films. Journal of applied physics, vol.33, no.9, 2669-2682.
Tech Dig IEEE Int Electron Devices Meeting High density and ultra small cell size of contact ReRAM (CR-RAM) in 90 nm CMOS logic technology and circuits tseng 2009 99
Cho, Choong-Rae, Cho, SungIl, Vadim, Sidorkin, Jung, Ranju, Yoo, Inkyeong. Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealing. Thin solid films, vol.495, no.1, 375-379.
10.1109/VTSA.2010.5488909
Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory. Advanced materials, vol.19, no.22, 3919-3923.
Appl Phys Lett Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance kinoshita 2008 10.1063/1.2959065 93
Proc Int Solid-State Circuits Conf An 8 Mb multi-layered cross-point ReRAM macro with 443 MB/s write throughput kawahara 2012 432
Yang, J. Joshua, Zhang, M.-X., Strachan, John Paul, Miao, Feng, Pickett, Matthew D., Kelley, Ronald D., Medeiros-Ribeiro, G., Williams, R. Stanley. High switching endurance in TaOx memristive devices. Applied physics letters, vol.97, no.23, 232102-.
10.1109/IEDM.2011.6131653
Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5？?x/TaO2？?x bilayer structures. Nature materials, vol.10, no.8, 625-630.
10.1109/IMW.2009.5090598
Tech Dig IEEE Int Electron Devices Meeting Demonstration of high-density ReRAM ensuring 10-year retention at 85 $^{\circ}$ C based on a newly developed reliability model wei 2011 721
10.1109/IEDM.2008.4796620
Ching-Hua Wang, Yi-Hung Tsai, Kai-Chun Lin, Meng-Fan Chang, Ya-Chin King, Chrong Jung Lin, Shyh-Shyuan Sheu, Yu-Sheng Chen, Heng-Yuan Lee, Chen, F. T., Ming-Jinn Tsai.
Three-Dimensional
Proc Int Solid-State Circuits Conf A 4 Mb embedded SLC resistive-RAM macro with 7.2 ns read-write random access time and 160 ns MLC-access capability sheu 2011 200
Tech Dig IEEE Int Electron Devices Meeting A stackable cross point phase change memory kau 2009 617
10.1109/VLSIT.2010.5556229
Ko, Changhyun, Ramanathan, Shriram. Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry. Applied physics letters, vol.93, no.25, 252101-.
Sire, Cédric, Blonkowski, Serge, Gordon, Michael J., Baron, Thierry. Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales. Applied physics letters, vol.91, no.24, 242905-.
Sato, Yoshihiro, Tsunoda, Koji, Kinoshita, Kentaro, Noshiro, Hideyuki, Aoki, Masaki, Sugiyama, Yoshihiro.
Sub-
10.1109/IITC.2009.5090335
10.1109/IEDM.2009.5424411
10.1109/IEDM.2005.1609462
Waser, Rainer. Resistive non-volatile memory devices (Invited Paper). Microelectronic engineering, vol.86, no.7, 1925-1928.
Waser, Rainer, Dittmann, Regina, Staikov, Georgi, Szot, Kristof. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges. Advanced materials, vol.21, no.25, 2632-2663.
Waser, Rainer, Aono, Masakazu. Nanoionics-based resistive switching memories. Nature materials, vol.6, no.11, 833-840.
Mater Today Resistive switching in transition metal oxides sawa 2008 10.1016/S1369-7021(08)70119-6 11 28
Akinaga, Hiroyuki, Shima, Hisashi. Resistive Random Access Memory (ReRAM) Based on Metal Oxides. Proceedings of the IEEE, vol.98, no.12, 2237-2251.
Valov, Ilia, Waser, Rainer, Jameson, John R, Kozicki, Michael N. Electrochemical metallization memories—fundamentals, applications, prospects. Nanotechnology, vol.22, no.25, 254003-.
Proc Very Large Scale Integration Tech Symp NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path lee 2009 28
Yu, Shimeng, Gao, Bin, Dai, Haibo, Sun, Bing, Liu, Lifeng, Liu, Xiaoyan, Han, Ruqi, Kang, Jinfeng, Yu, Bin. Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers. Electrochemical and solid-state letters, vol.13, no.2, H36-.
Kim, Yong-Mu, Lee, Jang-Sik. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices. Journal of applied physics, vol.104, no.11, 114115-.
10.1109/IEDM.2007.4419061
Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., Ryu, B. I.. Improvement of resistive memory switching in NiO using IrO2. Applied physics letters, vol.88, no.23, 232106-.
Chang, Wen-Yuan, Lai, Yen-Chao, Wu, Tai-Bor, Wang, Sea-Fue, Chen, Frederick, Tsai, Ming-Jinn. Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Applied physics letters, vol.92, no.2, 022110-.
Hsiung, Chang-Po, Gan, Jon-Yiew, Tseng, Shih-Hao, Tai, Nyan-Hwa, Tzeng, Pei-Jer, Lin, Cha-Hsin, Chen, Frederick, Tsai, Ming-Jinn. Resistance Switching Characteristics of TiO[sub 2] Thin Films Prepared with Reactive Sputtering. Electrochemical and solid-state letters, vol.12, no.7, G31-.
Lin, Chih-Yang, Wang, Sheng-Yi, Lee, Dai-Ying, Tseng, Tseung-Yuen. Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films. Journal of the Electrochemical Society : JES, vol.155, no.8, H615-.
Chae, S. C., Lee, J. S., Choi, W. S., Lee, S. B., Chang, S. H., Shin, H., Kahng, B., Noh, T. W.. Multilevel unipolar resistance switching in TiO2 thin films. Applied physics letters, vol.95, no.9, 093508-.
Appl Phys Lett Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals chang 2009 95
10.1109/NVMT.2008.4731194
Wong, H.-S. Philip, Raoux, Simone, Kim, SangBum, Liang, Jiale, Reifenberg, John P., Rajendran, Bipin, Asheghi, Mehdi, Goodson, Kenneth E.. Phase Change Memory. Proceedings of the IEEE, vol.98, no.12, 2201-2227.
Proc IEEE Int Memory Workshop Sub-10 $\mu$ A reset in NiO-based resistive switching memory (RRAM) cells nardi 2010
10.1109/IEDM.2011.6131572
Tech Dig IEEE Int Solid-State Circuits Conf A 0.13 $\mu$ m 64 Mb multi-layered conductive metal-oxide memory chevallier 2010 260
Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Junning Chen, Ming Liu.
Improvement of Resistive Switching Properties in
Tech Dig IEEE Int Electron Devices Meeting Highly reliable TaO $_{x}$ ReRAM and direct evidence of redox reaction mechanism wei 2008 293
Tech Dig IEEE Int Electron Devices Meeting Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications lee 2010 452
Appl Phys Lett Resistive switching behaviors of ZnO nanorod layers chang 2010 96
Yin, M., Zhou, P., Lv, H. B., Xu, J., Song, Y. L., Fu, X. F., Tang, T. A., Chen, B. A., Lin, Y. Y..
Improvement of Resistive Switching in
Jeong, Doo Seok, Schroeder, Herbert, Waser, Rainer. Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack. Electrochemical and solid-state letters, vol.10, no.8, G51-.
Wei Wang, Fujita, S., Wong, S.S.. RESET Mechanism of TiOx Resistance-Change Memory Device. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.30, no.7, 733-735.
Fujimoto, Masayuki, Koyama, Hiroshi, Hosoi, Yasunari, Ishihara, Kazuya, Kobayashi, Shinji. High-Speed Resistive Switching of TiO2/TiN Nano-Crystalline Thin Film. Japanese journal of applied physics. Part 2, Letters, vol.45, no.3, L310-.
Do, Young Ho, Kwak, June Sik, Bae, Yoon Cheol, Jung, Kyooho, Im, Hyunsik, Hong, Jin Pyo. Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions. Applied physics letters, vol.95, no.9, 093507-.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.