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IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.37 no.7, 2016년, pp.859 - 861
Park, Segeun (Memory Division, DRAM PA Team, Samsung Electronics Company, Ltd., Hwaseong, South Korea) , Seo, Hyeongwon (Memory Division, DRAM PA Team, Samsung Electronics Company, Ltd., Hwaseong, South Korea) , Oh, Jeonghoon (Memory Division, DRAM PA Team, Samsung Electronics Company, Ltd., Hwaseong, South Korea) , Kim, Ilgweon (Memory Division, DRAM PA Team, Samsung Electronics Company, Ltd., Hwaseong, South Korea) , Hong, Hyoungsun (Memory Division, DRAM PA Team, Samsung Electronics Company, Ltd., Hwaseong, South Korea) , Jin, Gyoyoung (Memory Division, DRAM PA Team, Samsung Electronics Company, Ltd., Hwaseong, South Korea) , Roh, Yonghan
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We clarify the role of metal gates (e.g., TiN) on the degradation of the state-of-the-art buried-channel-array transistor (B-CAT) in dynamic random access memory (DRAM) chips. Unless the thermal budget during the processing step for integration is well controlled, residual stress caused by grain gro...
Nicklaw, C.J., Lu, Z.-Y., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.. The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. IEEE transactions on nuclear science, vol.49, no.6, 2667-2673.
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DiMaria, D. J., Cartier, E., Arnold, D.. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon. Journal of applied physics, vol.73, no.7, 3367-3384.
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Chien-Liang Chen, Ya-Chin King. TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs. IEEE transactions on electron devices, vol.58, no.11, 3736-3742.
Park, S., Kim, I., Park, Y., Choi, J., Roh, Y.. FN-degradation of S-RCAT with different grain size and oxidation method. Microelectronic engineering, vol.119, 32-36.
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DiMaria, D. J., Cartier, E., Buchanan, D. A.. Anode hole injection and trapping in silicon dioxide. Journal of applied physics, vol.80, no.1, 304-317.
J Korean Phys Soc Study on the Vt variation of TiNmetal buried-gate (BG) cell transistors in DRAM jang 2011 10.3938/jkps.59.408 59 408
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Harada, Yoshinao, Eriguchi, Koji, Niwa, Masaaki, Watanabe, Takanobu, Ohdomari, Iwao. Impact of Structural Strained Layer near SiO2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.39, no.b7, 4687-4691.
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