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NTIS 바로가기Journal of physics. D, applied physics, v.49 no.5, 2016년, pp.055102 -
Sharma, Bhupendra K (Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore-560012, India) , Ahn, Jong-Hyun (School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea)
The instability of an amorphous indium–gallium–zinc oxide (IGZO) field effect transistor is investigated upon water treatment. Electrical characteristics are measured before, immediately after and a few days after water treatment in ambient as well as in vacuum conditions. It is observed...
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