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Scientific reports, v.6, 2016년, pp.38984 -
Han, Dedong (Institute of Microelectronics, Peking University , Beijing 100871, China) , Zhang, Yi (Institute of Microelectronics, Peking University , Beijing 100871, China) , Cong, Yingying (Institute of Microelectronics, Peking University , Beijing 100871, China) , Yu, Wen (Institute of Microelectronics, Peking University , Beijing 100871, China) , Zhang, Xing (Institute of Microelectronics, Peking University , Beijing 100871, China) , Wang, Yi (Institute of Microelectronics, Peking University , Beijing 100871, China)
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In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical pro...
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